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Thin film forming device plasma CVD deviceHandling Company
SHINKO SEIKI CO., LTD.Categories
Image | Part Number | Price (excluding tax) | subject | Processable range | processing time | Film thick distribution | Thickening | Gas used | Main exhaust vacuum pump | RF power supply for discharge | Baseboard heating heater | operation |
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Road lock type plasma CVD device |
Available upon quote |
For production |
600 x 600 (mm) |
About 4.5 hours / batch (SIO2 15μ μ) |
560x560 (mm) 7%or less |
15μm (SIO2) |
AR, N2O, SIH4 (AR diluted): Nitrogen (for vent, for purge) |
Oil diffusion pump (option: turbo molecular pump) |
13.56MHz (1.5kW) |
Heat temperature 360 ° C ± 10 ° C C (up to 380 ° C) |
Fully automatic by touch panel |
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