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2 frequency independent cleaning method dry etching device-Dry etching device
2 frequency independent cleaning method dry etching device-Japan Create Co., Ltd.

2 frequency independent cleaning method dry etching device
Japan Create Co., Ltd.

🧪 Chemical Industry Use 💻 Electronics & Electrical Use

Japan Create Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

185.3hours


About This Product

■ Overview

This is a mass production device that can manually process the maximum φ12 inch substrate fully. It is a versatile device that enables etching, assessing and ionic cleaning by switching gas species and plasma mode.

■ Characteristics

・ Switching between RIE mode and DP mode is possible ・ Metal contamination reduction by special surface treatment ・ Footprint ・ 2 frequency independent cleaning method ・ Ultra -low temperature cooling stage

■ Use

·semiconductor ・ MEMS ・ Electronic components

  • Product

    2 frequency independent cleaning method dry etching device
  • Usage Scenarios

    Chemical Industry Use / Electronics & Electrical Use

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1 Models of 2 frequency independent cleaning method dry etching device

Image Part Number Price (excluding tax) size Plasma sauce Vacuum exhaust Pressure control Process gas Control operation Data logging Transportation of the board option
2 frequency independent cleaning method dry etching device-Part Number-Dry etching device

Dry etching device

Available upon quote

Maximum φ12 inch

CCP type

Low vacuum process: MBP + DP
Takamasa Process: TMP + DP

APC control

F, CL2, AR, O2, etc.

Control: PLC
Operation: Touch panel or PC

External memory or PC

Air or vacuum transport robot

2 frequency independent cleaning method, ultra -low temperature cooling stage, electrostatic chuck stage, mechanical chuck stage, light emitting analysis system, gas detector, cylinder cabinet, etc.

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About Company Handling This Product

Response Rate

100.0%


Response Time

185.3hrs


Company Review

5.0
  • Japan

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