Oxide membrane / nitride film plasma CVD device-Oxide membrane / nitride film plasma CVD device
Oxide membrane / nitride film plasma CVD device-Japan Create Co., Ltd.

Oxide membrane / nitride film plasma CVD device
Japan Create Co., Ltd.


About This Product

■ Characteristics ・ Realizes low stress, high hardness, and high insulation by 2 frequency independent sealing method. ・ Realizes excellent membrane thickening and reproducibility ・ Metal contamination reduction by special surface treatment ・ Significant particle reduction and productivity improvement by radical plasma cleaning system ・ Control for a wide range of membrane characteristics ・ Abundant accumulation data ・ It can also be used for tray transportation ■ Use ·semiconductor ・ MEMS ・ Organic EL ・ Solar cells ・ Electronic components ・ Optical parts

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    Oxide membrane / nitride film plasma CVD device




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1 Models of Oxide membrane / nitride film plasma CVD device

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Oxide membrane / nitride film plasma CVD device-Part Number-Oxide membrane / nitride film plasma CVD device

Oxide membrane / nitride film plasma CVD device

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About Company Handling This Product

Japan Create Co., Ltd.

  • Japan
  • Since 1963
  • 40 employees

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