2 frequency independent cleaning method dry etching device
Japan Create Co., Ltd.
About This Product
■ Overview
This is a mass production device that can manually process the maximum φ12 inch substrate fully.
It is a versatile device that enables etching, assessing and ionic cleaning by switching gas species and plasma mode.
■ Characteristics
・ Switching between RIE mode and DP mode is possible
・ Metal contamination reduction by special surface treatment
・ Footprint
・ 2 frequency independent cleaning method
・ Ultra -low temperature cooling stage
■ Use
·semiconductor
・ MEMS
・ Electronic components
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Product
2 frequency independent cleaning method dry etching device
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Handling Company
Japan Create Co., Ltd.
1 Models of 2 frequency independent cleaning method dry etching device
| Product Image | Part Number | Price (excluding tax) | Control operation | Data logging | Plasma sauce | Pressure control | Process gas | Transportation of the board | Vacuum exhaust | option | size |
|---|---|---|---|---|---|---|---|---|---|---|---|
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Dry etching device |
Available upon quote |
Control: PLC Operation: Touch panel or PC |
External memory or PC | CCP type | APC control | F, CL2, AR, O2, etc. | Air or vacuum transport robot |
Low vacuum process: MBP + DP Takamasa Process: TMP + DP |
2 frequency independent cleaning method, ultra -low temperature cooling stage, electrostatic chuck stage, mechanical chuck stage, light emitting analysis system, gas detector, cylinder cabinet, etc. | Maximum φ12 inch |
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About Company Handling This Product
- Japan
- Since 1963
- 40 employees