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  4. Electron beam deposition system for research and development, BS series, multi-channel simultaneous deposition type. (JEOL Ltd.)
Electron beam deposition system for research and development, BS series, multi-channel simultaneous deposition type.-Multi-location simultaneous deposition type
Electron beam deposition system for research and development, BS series, multi-channel simultaneous deposition type.-JEOL Ltd.

Electron beam deposition system for research and development, BS series, multi-channel simultaneous deposition type.
JEOL Ltd.

About This Product

This electron beam evaporation system is suitable for research and development. It can be used for a wide range of applications by adding various optional mechanisms. The evaporation source can be selected from an electron beam evaporation source (electron gun), a bombarded evaporation source, or a resistance heating evaporation source. Combinations of an electron gun and a bombarded evaporation source, or an electron gun and a resistance heating source, are also possible. Features

■ Electron Beam Evaporation Source (Electron Gun)

It can evaporate various inorganic materials, such as high-melting-point metals that cannot be evaporated by resistance heating or induction heating, and oxides and sublimable materials with low thermal conductivity. Since the evaporation material in the water-cooled copper crucible is directly heated by the electron beam, there is no reaction with the crucible. High-speed output control is possible, allowing for precise film thickness control and evaporation rate control that is not possible with resistance heating. Compared to sputtering and CVD, the film deposition rate is more than an order of magnitude higher, and thick film deposition of 1 µm or more is easy. The electron gun, crucible, and electron gun power supply can be selected. The standard EBG-102UB6S electron gun has a high-speed scanning function and comes with a 12 ml x 6 crucible.

■ Combination of Electron Gun and Backscattered Electron Trap

By combining an electron gun and a backscattered electron trap, the amount of backscattered electrons incident on the substrate can be significantly reduced. Deformation of the resist during electron beam deposition is caused by temperature rise due to backscattered electron incidence. The backscattered electron trap suppresses backscattered electrons, enabling stable lift-off deposition. Ideal for electrode film formation in MEMS and other applications.

■ Bombard Deposition Source

An electron beam is irradiated onto the back surface of a liner filled with deposition material, heating the liner by electron shock (bombardment). The electron beam is not directly applied to the deposition material.

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    Electron beam deposition system for research and development, BS series, multi-channel simultaneous deposition type.

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1 Models of Electron beam deposition system for research and development, BS series, multi-channel simultaneous deposition type.

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Electron beam deposition system for research and development, BS series, multi-channel simultaneous deposition type.-Part Number-Multi-location simultaneous deposition type

Multi-location simultaneous deposition type

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JEOL Ltd.

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