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  4. High flexibility in precursor, process gas, and hardware configuration FlexAL ALD atomic layer deposition system (Oxford Instruments Ltd.)
High flexibility in precursor, process gas, and hardware configuration FlexAL ALD atomic layer deposition system-FlexAL ALD
High flexibility in precursor, process gas, and hardware configuration FlexAL ALD atomic layer deposition system-Oxford Instruments Ltd.

High flexibility in precursor, process gas, and hardware configuration FlexAL ALD atomic layer deposition system
Oxford Instruments Ltd.

Oxford Instruments Ltd.'s Response Status

Response Rate

100.0%

Response Time

26.3hours

Relatively Fast Response

About This Product

FlexAL ALD (Atomic Layer Deposition) systems offer a wide range of optimized, high-quality plasma and thermal ALD processes with high flexibility in precursor, process gas, and hardware configurations using a single process chamber.

■Features

・Thermal ALD and low-damage plasma ALD using remote plasma can be used together in one deposition chamber. ・RF electrode options to control thin film properties ・High throughput achieved through cassette handling, which is ideal for the manufacturing process. ・High flexibility in selecting precursors, process gases, hardware, and options ・Optimized to maintain high quality substrate with low damage ・Easy chamber maintenance thanks to replaceable liner ・Low-temperature deposition that achieves high-quality thin films even on surfaces that are significantly affected by temperature changes

■Function

Chamber ports and windows for integrating in-situ analytical equipment such as ellipsometry ・Automatic single-wafer type load lock that can load boards up to 200mm ・Can be clustered by adding process modules that perform vacuum transfer between chambers ・Precursor replacement procedures are displayed on the monitor with a checklist ・Clean room interface available with through-the-wall structure ・Can incorporate an ozone generator ・Wide range of electrode options - ground electrode and bias electrode ・Turbo molecular pump effective for nitrides and metals that are sensitive to moisture ・RF table bias options to improve film properties such as conductivity, crystallinity, and stress control

  • Product

    High flexibility in precursor, process gas, and hardware configuration FlexAL ALD atomic layer deposition system

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1 Models of High flexibility in precursor, process gas, and hardware configuration FlexAL ALD atomic layer deposition system

Image Part Number Price (excluding tax) Temperature range Precursor Plasma source generator Clusterable module Wafer size
High flexibility in precursor, process gas, and hardware configuration FlexAL ALD atomic layer deposition system-Part Number-FlexAL ALD

FlexAL ALD

Available upon quote

30~550 ℃​ (using table bias)

Precursor options for research (up to 100g) and manufacturing (up to 500g)
Up to 8 metallic liquid or solid rapid bubbling precursors can be used
Up to 10 plasma and thermal gas precursors

300W or 600W

PECVD, ICPCVD, RIE, sputtering module

Maximum 200mm

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About Company Handling This Product

Oxford Instruments Ltd.

Response Rate

100.0%

Response Time

26.3hrs

  • Japan

Related search keywords

ALD Systems
ALD Systems　Oxford Instruments Ltd.
Oxford Instruments Ltd.

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