CPE-200ahm with vacuum plasma etcher heating mechanism-CPE-200ahm
CPE-200ahm with vacuum plasma etcher heating mechanism-SAKIGAKE-Semiconductor

CPE-200ahm with vacuum plasma etcher heating mechanism
SAKIGAKE-Semiconductor


About This Product

High -speed and high efficiency by heating SIO2 and SI etching and organic products. ■ Product overview ・ Newly heated stage heated in the plasma etcher CPE series ・ Heating up to up to 400 ° C ・ For shortening processing time, for acceleration test for endurance tests ・ Easy operation with a touch panel (plasma operation unit) ・ High -precision temperature control by PID control

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    CPE-200ahm with vacuum plasma etcher heating mechanism




*Please note that we may not be able to accommodate sample requests.

1 Models of CPE-200ahm with vacuum plasma etcher heating mechanism

Product Image Part Number Price (excluding tax) Electrode stage External dimensions Gas introduction Stage heating power supply
CPE-200ahm with vacuum plasma etcher heating mechanism-Part Number-CPE-200ahm

CPE-200ahm

Available upon quote 200mm in diameter W560mm x D690mm x H1,650mm Two systems Maximum temperature 400 ° C Single phase 200V, 30A

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