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  4. CPE-200ahm with vacuum plasma etcher heating mechanism (SAKIGAKE-Semiconductor)
CPE-200ahm with vacuum plasma etcher heating mechanism-CPE-200ahm
CPE-200ahm with vacuum plasma etcher heating mechanism-SAKIGAKE-Semiconductor

CPE-200ahm with vacuum plasma etcher heating mechanism
SAKIGAKE-Semiconductor

SAKIGAKE-Semiconductor's Response Status

Response Rate

100.0%

Response Time

120.0hours

About This Product

High -speed and high efficiency by heating SIO2 and SI etching and organic products.

■ Product overview

･ Newly heated stage heated in the plasma etcher CPE series ･ Heating up to up to 400 ° C ･ For shortening processing time, for acceleration test for endurance tests ･ Easy operation with a touch panel (plasma operation unit) ･ High -precision temperature control by PID control

  • Product

    CPE-200ahm with vacuum plasma etcher heating mechanism

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1 Models of CPE-200ahm with vacuum plasma etcher heating mechanism

Image Part Number Price (excluding tax) External dimensions Electrode stage Stage heating Gas introduction power supply
CPE-200ahm with vacuum plasma etcher heating mechanism-Part Number-CPE-200ahm

CPE-200ahm

Available upon quote

W560mm x D690mm x H1,650mm

200mm in diameter

Maximum temperature 400 ° C

Two systems

Single phase 200V, 30A

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About Company Handling This Product

SAKIGAKE-Semiconductor

Response Rate

100.0%

Response Time

120.0hrs

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Plasma Etching Systems
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