Multi-chamber device ENTRONTM N300
ULVAC Sales Co., Ltd.
About This Product
■Summary
The multi-chamber device ENTRONTM N300 is a just-fit device that provides appropriate investment efficiency. In addition to PVD and CVD, it can also be equipped with NVM etching. By expanding the lineup with the top model EX2, the ENTRON series will accurately meet the diverse needs of our customers.
■Applications
・Cutting-edge semiconductor memory (DRAM, Flash memory)
・Cutting-edge semiconductor logic
・Next-generation nonvolatile memory (film formation, etching)
・UBM, TSV, power device
・CMOS image sensor
■Features
・Minimum and flexible module configuration possible
・Can also be equipped with the latest technologies such as PVD, CVD, ALD and NVM etching.
・Supports a variety of applications such as Cu wiring, barrier metal, UBM, TSV, CMOS image sensor, NVM etching, etc.
・Single-core cluster concept allows installation of 6 process modules
■Environmental consideration
Equipped with various energy-saving functions as standard, achieving 40% energy savings compared to conventional models.
■Control system compatible with next-generation semiconductor Fab
Excellent thin film controllability and EES compatible. Compatible with cutting-edge Fab automation
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Product
Multi-chamber device ENTRONTM N300
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Handling Company
ULVAC Sales Co., Ltd.
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Categories
1 Models of Multi-chamber device ENTRONTM N300
| Product Image | Part Number | Price (excluding tax) | Board dimensions | CVD/ALD | Compressed air | Control system | Cooling water | Electricity | Energy saving function | Etching for NVM | Film thickness/etching distribution*1 | Grounding work | Load lock | Main exhaust | Module | Option | Possible process gas system | Pre-clean | Process temperature | Required gas | Rough pulling | Spatter | Throughput | Transfer | Transfer robot | Transfer room |
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ENTRON N300 |
Available upon quote | Φ300mm or Φ200mm | CVD, CDT for FEOL, BEOL, NVM | 0.5~0.7MPa | FA-PC control (Cluser Tool controller) |
0.3~0.5MPa, temperature 20~25℃, For chiller: 120L/min For He Compressor: 15L/min For DRP: 3L/min×n units |
50Hz/60Hz, 3Φ, 200V | Standard equipment | High temperature, room temperature etching, post treatment for NVM |
Within Φ300mm board ±5% *1 Performance varies depending on membrane type. |
Class A | 10Pa or less |
LL room: Dedicated dry pump Transfer chamber: cryopump or TMP+trap or dry pump Process chamber: Cryopump or TMP (+trap) |
PVD: 3.0×10E-6Pa or less/ETCHER: 6.7E-4Pa or less |
LTS/SIS/Multi-cathode/CVD/ALD/NVM: Etcher module selection available RGA: Qulee EES: EDPMS (Equipment Engineering System) |
PVD: up to 4 lines, CVD: up to 14 lines, Etcher: up to 11 lines | ICP pre-etching, hydrogen annealing, CDT | R.T~450℃ |
Various process gases: 0.1~0.3MPa For vent N2: 0.2~0.7MPa For dry pump N2: 0.2~0.7MPa |
Roughing dry pump, TMP fore dry pump | Sputterdown method/rotating magnet cathode: conventional, LTS, SIS, HiCIS, multi-cathode | Mechanical throughput: 80wph (transferred twice) | PVD: 1.0×10E-4Pa or less/ETCHER: 10Pa or less |
Dual arm high vacuum transfer robot |
Atmospheric wafer transfer machine + octagonal vacuum transfer chamber |
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About Company Handling This Product
- Japan