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Multi-chamber device ENTRONTM N300-ENTRON N300
Multi-chamber device ENTRONTM N300-ULVAC Sales Co., Ltd.

Multi-chamber device ENTRONTM N300
ULVAC Sales Co., Ltd.

ULVAC Sales Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

125.8hours


About This Product

■Summary

The multi-chamber device ENTRONTM N300 is a just-fit device that provides appropriate investment efficiency. In addition to PVD and CVD, it can also be equipped with NVM etching. By expanding the lineup with the top model EX2, the ENTRON series will accurately meet the diverse needs of our customers.

■Applications

・Cutting-edge semiconductor memory (DRAM, Flash memory) ・Cutting-edge semiconductor logic ・Next-generation nonvolatile memory (film formation, etching) ・UBM, TSV, power device ・CMOS image sensor

■Features

・Minimum and flexible module configuration possible ・Can also be equipped with the latest technologies such as PVD, CVD, ALD and NVM etching. ・Supports a variety of applications such as Cu wiring, barrier metal, UBM, TSV, CMOS image sensor, NVM etching, etc. ・Single-core cluster concept allows installation of 6 process modules

■Environmental consideration

Equipped with various energy-saving functions as standard, achieving 40% energy savings compared to conventional models.

■Control system compatible with next-generation semiconductor Fab

Excellent thin film controllability and EES compatible. Compatible with cutting-edge Fab automation

  • Product

    Multi-chamber device ENTRONTM N300

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1 Models of Multi-chamber device ENTRONTM N300

Image Part Number Price (excluding tax) Electricity Film thickness/etching distribution*1 Rough pulling Energy saving function Possible process gas system Transfer room Transfer robot Grounding work Required gas Board dimensions Compressed air Control system Cooling water Main exhaust Process temperature Pre-clean Throughput Spatter Transfer Etching for NVM Module Load lock CVD/ALD Option
Multi-chamber device ENTRONTM N300-Part Number-ENTRON N300

ENTRON N300

Available upon quote

50Hz/60Hz, 3Φ, 200V

Within Φ300mm board ±5%
*1 Performance varies depending on membrane type.

Roughing dry pump, TMP fore dry pump

Standard equipment

PVD: up to 4 lines, CVD: up to 14 lines, Etcher: up to 11 lines

Atmospheric wafer transfer machine + octagonal vacuum transfer chamber

Dual arm high vacuum transfer robot

Class A

Various process gases: 0.1~0.3MPa
For vent N2: 0.2~0.7MPa
For dry pump N2: 0.2~0.7MPa

Φ300mm or Φ200mm

0.5~0.7MPa

FA-PC control (Cluser Tool controller)

0.3~0.5MPa, temperature 20~25℃,
For chiller: 120L/min
For He Compressor: 15L/min
For DRP: 3L/min×n units

LL room: Dedicated dry pump
Transfer chamber: cryopump or TMP+trap or dry pump
Process chamber: Cryopump or TMP (+trap)

R.T~450℃

ICP pre-etching, hydrogen annealing, CDT

Mechanical throughput: 80wph (transferred twice)

Sputterdown method/rotating magnet cathode: conventional, LTS, SIS, HiCIS, multi-cathode

PVD: 1.0×10E-4Pa or less/ETCHER: 10Pa or less

High temperature, room temperature etching, post treatment for NVM

PVD: 3.0×10E-6Pa or less/ETCHER: 6.7E-4Pa or less

10Pa or less

CVD, CDT for FEOL, BEOL, NVM

LTS/SIS/Multi-cathode/CVD/ALD/NVM: Etcher module selection available
RGA: Qulee
EES: EDPMS (Equipment Engineering System)

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About Company Handling This Product

Response Rate

100.0%


Response Time

125.8hrs

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