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Sputtering equipment for R&D QAM series-QAM-4C-S
Sputtering equipment for R&D QAM series-ULVAC Sales Co., Ltd.

Sputtering equipment for R&D QAM series
ULVAC Sales Co., Ltd.

ULVAC Sales Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

125.8hours


About This Product

■Summary

This is a device that can be used in a wide range of applications, based on ULVAC's extensive film-forming technology and experience. Achieved miniaturization while providing versatility and expandability. Process chambers and exhaust systems can be freely combined to suit your application.

■Applications

Based on ULVAC's extensive film-forming technology and experience, this low-cost R&D equipment can handle a wide range of functions required for small-scale experimental applications such as all kinds of research and development and material development.

■Can be customized to suit your experiment/research purpose/budget

We have built a unit that can be expanded by incorporating plenty of the technology and know-how we have cultivated over the years. For example, by adding each module to the base machine, it is possible to eventually create a 2-module machine (with L/L room). In addition, you can choose between mechanical and electrical integrated type and control module separated type to suit your layout.

■Achieve advanced functions, intuitive operation, and safety

・Safe and secure with intuitive operation ・Process data can be analyzed with peace of mind (data logging: optional) ・Recipe control enables film formation with good reproducibility ・Stable operation of equipment with interlock equivalent to production equipment

■Low pressure process

It has a discharge sustaining pressure range of approximately 1Pa to 0.1Pa, allowing dense film formation by sputtering at a lower pressure than before.

■Multi-dimensional simultaneous/multi-layer sputter deposition

Because each cathode aims at the center of the substrate, simultaneous multi-source sputtering is possible. Laminated films can be created using shutter control. Also, by using a jig (optional), static counter sputtering is also possible.

■Support for magnetic thin film

The same cathode can be used with various magnetic materials (Fe, Ni, Co, etc.)

■Adoption of LTS

By adopting LTS*1, it is possible to minimize the influence of non-uniform plasma near the cathode on the substrate. It is also possible to minimize the influence of the cathode magnet's magnetic field. Note) *1: LTS: Long Throw Sputter

■UHV compatible (QAM-4-S only)

By using bakeable equipment, the ultimate pressure in the film forming chamber can be kept below 1 x 10-6Pa*2. Note) *2: Adopts a double O-ring seal structure (intermediate exhaust), greatly improving maintainability compared to conventional metal seals.

  • Product

    Sputtering equipment for R&D QAM series

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1 Models of Sputtering equipment for R&D QAM series

Image Part Number Price (excluding tax) Electricity Film thickness distribution Maximum gas introduction amount Onboard power supply Exhaust system Exhaust Film formation Compatible board size Substrate heating mechanism Compressed air Ultimate pressure Processing method Cooling water Chamber baking Target size Cathode method Number of cathodes Earth
Sputtering equipment for R&D QAM series-Part Number-QAM-4C-S

QAM-4C-S

Available upon quote

3φAC200V 50/60Hz

Within ±5% (combined with substrate rotation during Al film formation)

1) Max.50sccm (Ar)
2) Max.10sccm (O2)
3) Max.10sccm (N2)

DC500W 1 unit
・DC500W, RF300W*2 can be selected, and up to 2 units can be installed *Optional

1) Turbo pump
2) Rotary pump
Dry pump *Optional

Touch panel (PLC control) Remote manual*3 Fully automatic*4
*3: Manual/semi-automatic operation from touch panel
*4: Recipes such as power and time can be input using the touch panel.

Touch panel (PLC control) Remote manual*3 Fully automatic*4
*3: Manual/semi-automatic operation from touch panel
*4: Recipes such as power and time can be input using the touch panel.

Max.φ4 inch x 1 piece

Lamp heater Regular use 400℃ *Optional

0.5~0.7MPa

1×10-4Pa or less

Batch type

20~28℃, specific resistance 5KΩ or more, supply pressure 0.2~0.3MPa

Bake at 110℃ (chamber water cooling included) *Optional

Φ2 inch

Long throw magnetron sputtering
・Helicon sputter*1 *Optional

2 inch cathode (for both magnetic and non-magnetic materials)
Up to 4 units can be installed

A class, D class

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About Company Handling This Product

Response Rate

100.0%


Response Time

125.8hrs

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