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  2. Semiconductor Manufacturing
  3. ALD Systems
  4. High-speed remote plasma ALD equipment Atomfab ALD atomic deposition system (Oxford Instruments Ltd.)
High-speed remote plasma ALD equipment Atomfab ALD atomic deposition system-Atomfab
High-speed remote plasma ALD equipment Atomfab ALD atomic deposition system-Oxford Instruments Ltd.

High-speed remote plasma ALD equipment Atomfab ALD atomic deposition system
Oxford Instruments Ltd.

Oxford Instruments Ltd.'s Response Status

Response Rate

100.0%

Response Time

25.0hours

Relatively Fast Response

About This Product

Atomfab enables plasma ALD processes for high-speed, low-damage, low-cost-of-ownership manufacturing for GaN power/RF devices. Atomfab is the fastest remote plasma ALD device on the market.

■Solutions that meet the needs of manufacturing sites

- Advantageous cost of ownership ・Fast and easy maintenance ・High uniformity of thin film ・High quality materials ・Low damage to the board ・High throughput due to shortened cycle time ・Achieve clustering and automatic wafer handling Atomfab's ALD technology provides precisely controlled ultra-thin films for conformal coating of fine substrate structures for advanced nanoscale applications.

■Process advantages in passivation of power/RF devices

・Process settings guaranteed by our engineers ・Permanent support for additional or new processes ・Low damage plasma process ・Achieving high quality deposition with less contamination ・Low particle level ・High throughput achieved by short plasma irradiation time ・Plasma surface pretreatment

■Advantages of plasma ALD in GaN, power/RF devices

・Improve interface quality by plasma pretreatment before deposition ・Low damage, homogeneous film formation ・Remote plasma ALD using ion energy controlled from near zero to 30eV ・Passivation by ALD and Al2O3 gate insulator film Increased throughput and improved uniformity with remote plasma ALD on the manufacturing floor

■Plasma

Innovative Plasma Source: Atomfab uses a patent-pending remote plasma source specifically designed for atomic-scale processes. ・In order to maximize the performance of the device, damage to delicate circuit boards is low. ・High-speed cycle time and reliability are achieved through uniform plasma irradiation and film formation. ・Achieves short-time plasma (250ms) with patent-pending AMU. ・High throughput with short irradiation time (80ms). ・Achieves high yield through highly reproducible irradiation time and low reflected power.

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    High-speed remote plasma ALD equipment Atomfab ALD atomic deposition system

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1 Models of High-speed remote plasma ALD equipment Atomfab ALD atomic deposition system

Image Part Number Price (excluding tax) Plasma ALD Al2O3 (300 ℃) Withstand voltage Plasma ALD Al2O3 (300 ℃) Wafer-to-wafer thickness repeatability Plasma ALD Al2O3 (300 ℃) Wafer thickness uniformity
High-speed remote plasma ALD equipment Atomfab ALD atomic deposition system-Part Number-Atomfab

Atomfab

Available upon quote

≥7.0MV/cm

<±1.0%

<±1.0%

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About Company Handling This Product

Oxford Instruments Ltd.

Response Rate

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Response Time

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ALD Systems
ALD Systems　Oxford Instruments Ltd.
Oxford Instruments Ltd.

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