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  3. Atmospheric pressure plasma device
  4. Attotive pressure (direct) Attotive pressure liquid powder plasma processing device ASS-400 (SAKIGAKE-Semiconductor)
Attotive pressure (direct) Attotive pressure liquid powder plasma processing device ASS-400-ASS-400
Attotive pressure (direct) Attotive pressure liquid powder plasma processing device ASS-400-SAKIGAKE-Semiconductor

Attotive pressure (direct) Attotive pressure liquid powder plasma processing device ASS-400
SAKIGAKE-Semiconductor

SAKIGAKE-Semiconductor's Response Status

Response Rate

100.0%

Response Time

120.0hours

About This Product

Mix with liquid by surface treatment of powder without a surfactant. Preparation: Filer preprocessing, baked powder pretreatment. Others: For the development of hybrid material.

■ Product features

･ We have eliminated unnecessary equipment and achieve excellent cost performance by making it a simple equipment configuration. ･ Because it is a windless process, the powder does not scatter. ･ Mix the flour and liquid that were not mixed at all.

■ Main use

Excellent features of powdered plasma processing ･ Carbon powder such as carbon nanotube (with a track record) ･ Paints of water -soluble ink ･ Filler preprocessing ･ Preparing for firing powder ･ Other ideal for basic research applications in each field.

  • Product

    Attotive pressure (direct) Attotive pressure liquid powder plasma processing device ASS-400

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1 Models of Attotive pressure (direct) Attotive pressure liquid powder plasma processing device ASS-400

Image Part Number Price (excluding tax) Processing pressure (room temperature) Voltage Outer diameter dimensions Built -in mechanism utility
Attotive pressure (direct) Attotive pressure liquid powder plasma processing device ASS-400-Part Number-ASS-400

ASS-400

Available upon quote

1ATM = 760TORR level (atmospheric pressure)

Frequency: 15kV/50/60Hz

450 (W) 300 (d) 630 (H)

Stirring, power adjustment, timer

Single -phase 100V/50/60Hz/5.0A

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About Company Handling This Product

SAKIGAKE-Semiconductor

Response Rate

100.0%

Response Time

120.0hrs

Related search keywords

Atmospheric pressure plasma device
Atmospheric pressure plasma device　SAKIGAKE-Semiconductor
SAKIGAKE-Semiconductor

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