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  4. PECVD film deposition equipment for solar cells GENERIS PECVD (Media Institute Co., Ltd.)
PECVD film deposition equipment for solar cells GENERIS PECVD-GENERIS PECVD
PECVD film deposition equipment for solar cells GENERIS PECVD-Media Institute Co., Ltd.

PECVD film deposition equipment for solar cells GENERIS PECVD
Media Institute Co., Ltd.

About This Product

■Summary

With the GENERIS PECVD system, SINGULUSTECHNOLOGIES responds flexibly to special needs in the mass production of state-of-the-art crystalline silicon solar cells with the highest efficiency. GENERIS PECVD allows deposition on both sides of the wafer while still in vacuum. The application of both AlOx and SiNx processes is accommodated in one system with the help of a gas separation chamber.

■Function

・Throughput of up to 6,000 wafers per hour ・Passivation, anti-reflection, protective layer deposition ・Typical processes: SiNx, SiOx, AlOx, a-Si, poly-Si, and plasma oxides ・High-speed linear ICP source Dynamic deposition rate up to 100 nm*m/min depending on layer properties ・Complete temperature control before and during deposition ・For PERC350℃, standard board temperature 180~550℃ ・Reliable horizontal substrate transport system with integrated carrier return system (CRS) ・No particles are generated due to the vacuum conveyance system. ・Support for various board sizes (M2 to M12) carriers ・Typical wafer thickness 120-200 µm ・Supports 64 wafers per carrier ・ (M2 to M6) carrier, carrier material CFC ・Automatic wafer loading and unloading ・Total coating width approximately 1.4 meters ・Layer uniformity‹+/- 5% on substrate and between carriers

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    PECVD film deposition equipment for solar cells GENERIS PECVD

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1 Models of PECVD film deposition equipment for solar cells GENERIS PECVD

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PECVD film deposition equipment for solar cells GENERIS PECVD-Part Number-GENERIS PECVD

GENERIS PECVD

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