8 GaN Power Device Manufacturers in 2024
This section provides an overview for gan power devices as well as their applications and principles. Also, please take a look at the list of 8 gan power device manufacturers and their company rankings. Here are the top-ranked gan power device companies as of April, 2024: 1.GaNPower International Inc., 2.NexGen Power Systems, 3.Navitas Semiconductor.
Table of Contents
What Is a GaN Power Device?
A GaN power device is the next-generation semiconductor power device formed on gallium nitride crystals.
GaN power devices have attracted much attention in recent years because they can handle higher power with lower power loss than conventional power devices made on silicon using semiconductor processes. However, recent technological innovations related to compound semiconductors are resolving these issues.
Higher efficiency in GaN power devices also allows for simplification of heat removal mechanisms, which can contribute to significantly smaller products and lower power consumption.
Uses of GaN Power Devices
GaN power devices are widely used in chargers that enable rapid charging of smartphones and PCs and in amplifiers for cell phone base stations. Because they can handle more power than silicon-based power devices, they are often used in PC chargers and amplifiers for base stations as a replacement for them.
In addition, GaN power devices with high efficiency are beginning to be used in power conditioners for photovoltaic power generation systems, which require extremely high conversion efficiency. Furthermore, because of their ability to operate at high switching speeds, GaN power devices are also used in switching power supplies for server equipment, where power supply stability is required.
Principle of GaN Power Devices
The principle of GaN power devices lies in the fact that the semiconductor property called band gap of GaN is about three times larger than that of Si. This makes GaN devices resistant to high electric fields.
GaN power devices generally consist of a high electron mobility transistor circuit called a HEMT structure. The HEMT structure is normally ON, which means that the current always flows, and is turned OFF by applying a negative voltage to the gate. Therefore, if negative voltage cannot be applied to the gate electrode due to some problem, it cannot be turned off and becomes very unstable.
GaN power devices have such reliability problems, and stable normally OFF has been a challenge from the viewpoint of ease of use. Therefore, we have realized normally OFF by incorporating normally OFF Si-MOSFETs in the gate electrode.
Another challenge is a physical phenomenon called current collapses. This is a phenomenon in which ON resistance increases, and current concentration occurs during high-voltage switching, which is caused by defects in the GaN crystal fabrication process. However, thanks to innovations in crystalline thin-film deposition technology, high-quality deposition is now possible.
Other Information on GaN Power Devices
1. Segregation between GaN and SiC
GaN and SiC have large dielectric breakdown strength due to their large band gap, which makes it easy to increase device breakdown voltage. This makes them suitable for high-current, high-voltage applications. In particular, SiC is often used in high-current applications such as motor drives for EV vehicles and power generation systems and is expected to replace IGBTs shortly due to its device breakdown voltage.
On the other hand, GaN power devices are widely used in applications that require high switching speeds and high-frequency operation because of their high cut-off frequency (fT). This indicates high frequency characteristics, and high electron mobility, although it is difficult to achieve the same level of breakdown voltage as SiC.
In other words, GaN and SiC are divided into GaN devices for high-speed switching charging high-frequency applications for 5G base stations, and SiC devices for high-voltage and high-current applications.
2. Trends in GaN-based Power Semiconductors
GaN power semiconductors are now being used in two major applications: one targeting on-board charging of electric vehicles at relatively high 650 V or higher, and the other targeting voltage conversion in DC-DC converters from 48 V to 12 V in hybrid electric vehicles. Both of these applications, as GaN power semiconductors, along with SiC devices, are expected to drive the wide bandgap (WBG) device market in the future.
The challenges to the commercialization of these new applications are reliability, manufacturing yield, and cost. However, thanks to the efforts of semiconductor companies around the world, the potential for commercialization is making great strides.
3. Applications of GaN Devices
Other applications of GaN devices include light source applications: There are great expectations for GaN as a material for LED light sources and laser diodes with high luminous efficacy because GaN is a direct transition semiconductor among compound semiconductors.
As an electronic device, GaN is also expected to be used in high-power, high-frequency amplifier transistors for millimeter wave and sub-THz applications.
List of 8 GaN Power Device Manufacturers
*Including some distributors, etc.
Sort by Features
- Default
- Company Size: largest first
- Year Founded: oldest first
- Year Founded: earliest first
Sort by Area
- United States of America
- Canada
- Japan
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Navitas Semiconductor
GaN Power ICs
Manufacturer Overview
Navitas Semiconductor, founded in 2014 in Torrance, CA USA is a manufacturer of Gallium Nitride semiconductors. The company’s products include GanFast power IC’s which integrate gallium nitride power and drive with control, sensing and protection to enable faster charging, higher power density and greater energy savings catering to the mobile, data centre, solar and smart grid sectors. The Company is CarbonNeutral certified and is working across a range of customer partnerships to assess and reduce total lifecycle footprint.
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NexGen Power Systems
Laptop Power Supply Unit
Manufacturer Overview
NexGen Power Systems, headquartered in Santa Clara, California, has been a manufacturer of power conversion systems since its establishment in 2017. The company designs and manufactures environmentally sustainable power solutions, including double pulse evaluation platform single-ended and half-ended topology, using its proprietary NexGen Vertical GaN semiconductor technology. The company operates on a global scale, with a fabrication facility in Syracuse, New York, a center of excellence in Bangalore, India, and sales offices in China, Japan, and South Korea. The Vertical GaN technology is applied in automotive EV power conversion systems, data center power supplies, industrial motor drives, and solar energy systems.
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Transphorm Inc.
650V GaN FETs
Company Overview
Transphorm Inc. established in 2007 and based in Goleta, California, is a manufacturer and supplier of gallium nitride (GaN) transistors and modules. The company's product range includes 650V GaN devices, cascode GaN FET, gallium nitride power conversion modules, and semiconductor components. These products are essential for efficient high-voltage power conversion, particularly addressing the challenges posed by traditional silicon devices. Serving the semiconductor manufacturing and power conversion industries, it also offers extensive device qualification, long-term reliability testing, and applications-driven design support.
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Renesas Electronics Corporation.
GaN FET Drivers
Manufacturer Overview
Renesas Electronics Corporation was established in 2002 and is headquartered in Tokyo, Japan. Renesas is a global research, design, and manufacturer of semiconductors used in industries spanning automotive, consumer electronics, the internet of things, power & energy, and industrial sectors. Renesas manufactures both analog and digital products. Analog products include amplifiers, audio & video devices, data converters, PLC, and switches & multiplexers. Digital products include microcontrollers, memory components, sensors, wireless connectivity products, and others. Renesas also offers design resources such as kits, development tools, partner programs, and design tools.
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GaNPower International Inc.
GaN PD fast chargers
Manufacturer Overview
GaNPower International Inc., established in 2015 and headquartered in Vancouver, Canada, is a manufacturer of Gallium Nitride (GaN) based power electronics. The company aims to establish sustainable energy conversion solutions through GaN device technology and power electronics systems. The approach is strengthening the GaN High Electron Mobility Transistor (HEMT) power device design, controller and driver Integrated Circuit (IC) design, and power electronics system design. The product portfolio features GaNFET and GaN-IC, GaN PD fast chargers.
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Texas Instruments
Gallium nitride (GaN) ICs
Manufacturer Overview
Texas Instruments Incorporated was founded in 1930 and is headquartered in Dallas, Texas. Texas Instruments is a producer of high tech equipment for industrial, automotive, personal electronics, communications equipment industries. Texas Instruments designs, manufactures, and sells semiconductors to electronics designers and manufacturers in the United States and internationally. Texas Instruments operates in two segments: analog and embedded processing. The Analog segment offers power products, including battery-management solutions, DC/DC switching regulators, power switches, linear regulators, voltage references, and lighting products. The Embedded Processing segment offers microcontrollers that are used in fields such as electronic equipment and digital signal processors for mathematical computations.
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STMicroelectronics
PowerGaN transistor
Manufacturer Overview
ST Micro Electronics is a global semiconductor company serving customers with innovations to have a positive impact on people's lives. Their product line is micro electronic systems, such as switches, controllers, sensors and drivers. The main selling point of ST Micro Electronics is its provision of sustainable products, and introducing their electronics to create a more sustainable world. The company, as well as providing the electronic devices, also provides software and support, ensuring that all fields are covered to provide a fully provide a supported and strong relationship with their customer base. ST Micro Electronics believe that technology plays a key role in helping to solve environmental and social challenges, which is why their semiconductor technologies start with their employees, their customers and partners.
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GaN Systems Corp.
GaN TRANSISTORS
Manufacturer Overview
GaN Systems Corp, established in 2008 in Canada, is a manufacturer of Gallium Nitride semiconductors and power transistors. The company specializes in the field of clean power technology conversion using Gallium nitride switching diodes and transistors. The products include 100 V Series, 650 V Series, Evaluation Kits, robust transistors and circuit simulator tools. They are used in various industries, including automotive, data centers, consumer electronics, and renewable energy for enhanced power density, optimal switching speeds, and reduced energy losses. These transistors are efficient in power conversion, enabling smaller, lighter, and more energy-efficient electronic systems to work optimally.
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GaN Power Device Manufacturer Ranking
*Including some distributors, etc.Ranking as of April 2024
Derivation Method| Rank | Company | Click Share |
|---|---|---|
| 1 | GaNPower International Inc. |
27.4%
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| 2 | NexGen Power Systems |
16.7%
|
| 3 | Navitas Semiconductor |
14.5%
|
| 4 | GaN Systems Corp. |
14.5%
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| 5 | STMicroelectronics |
8.5%
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| 6 | Transphorm Inc. |
7.5%
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| 7 | Renesas Electronics Corporation. |
5.7%
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| 8 | Texas Instruments |
5.2%
|
Derivation Method
The ranking is calculated based on the click share within the gan power device page as of April 2024. Click share is defined as the total number of clicks for all companies during the period divided by the number of clicks for each company.Number of Employees
- Renesas Electronics Corporation.: 21,017
Newly Established Company
- Navitas Semiconductor: 2014 (10 years ago)
- Transphorm Inc.: 2007 (17 years ago)
- Renesas Electronics Corporation.: 2002 (22 years ago)
Company with a History
- Texas Instruments: 1930 (94 years ago)
- Renesas Electronics Corporation.: 2002 (22 years ago)
- Transphorm Inc.: 2007 (17 years ago)
GaN Power Device Manufacturers in United States
*Including some distributors, etc.
Global Distribution of GaN Power Device Manufacturers by Country
*Including some distributors, etc.
| Country | Number of Companies | Share (%) |
|---|---|---|
United States of America
|
3 | 60.0% |
Japan
|
1 | 20.0% |
Canada
|
1 | 20.0% |
List of GaN Power Device Products
2 products are listed.
Tokitrading
100W Industrial Standard GAN PD Power Delivery Power Source
10+ people viewing
We handle an AC adapter that meets the Industrial Standards IEC62368-1. In addition to the PSE mark, which is the Japan Electrical Appliance Safety...
Tokitrading
60W Industrial Standards GAN PD Power Delivery Power Source
10+ people viewing
We handle an AC adapter that meets the Industrial Standards IEC62368-1. In addition to the PSE mark, which is the Japan Electrical Appliance Safety...
