Product
Multi-chamber sputtering equipment ENTRONTM-EX2 W300Handling Company
ULVAC Sales Co., Ltd.Categories
Product Image | Part Number | Price (excluding tax) | Board dimensions | CVD | Compressed air | Control system | Cooling water | Electricity | Energy saving function | Film thickness distribution (*1) | Grounding work | Main exhaust | Module | Option | Possible process gas system | Pre-clean | Process temperature | Purpose | Required gas | Rough pulling | Spatter | Throughput | Transfer robot | Transport system | Ultimate pressure |
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ENTRONTM-EX2 W300 (Tandem) |
Available upon quote | Compatible with φ300mm | FEOL, BEOL, CVD for NVM, ALD, etc. | 0.5~0.7MPa | FA-PC control (Cluster tool controller) |
0.3~0.5MPa, temperature 20~25℃ For chiller: 60L/min For He Compressor: 7L/min×n units For DRP: 8L/min×n units |
50Hz/60Hz, 3φ, 200V | Standard equipment |
Inside φ300 board/within ±5% *1: Performance varies depending on film type. |
Class A |
LL chamber: Turbo molecular pump Transport: TMP or cryopump Process chamber: TMP+cold trap (for H20) |
L/UL chamber x 2 + maximum 8 process chambers +Maximum 2Degas or Cool room |
LTS/SIS/multi-cathode/CVD/ALD module selection available RGA: Qulee In-Aligner EES: EDPMS (Equipment Engineering System) |
PVD: Up to 4 systems CVD: Up to 14 systems |
ICP etching, hydrogen annealing, CDT | R.T~450℃ |
Memory, non-volatile memory, logic For multi-layer process mass production |
Various process gases: 0.1~0.3MPa For vent N2: 0.2~0.7MPa For dry pump N2: 0.2~0.7MPa |
Roughing dry pump, TMP fore dry pump | Sputter-down method/rotating magnet cathode: conventional, LTS, SIS, HiCIS, multi-cathode | Mechanical throughput: 160wph (transferred twice) |
Dual arm high vacuum transfer robot x 2 With wafer position correction |
Atmospheric wafer transfer machine + Octagonal vacuum transfer chamber x 2 |
Transfer room: 3.0E-6Pa or less Process chamber: 3.0E-6Pa or less |