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XCSW compounds / semiconductor crystal SI crystal substrates, silicon wafersHandling Company
Tours Co., Ltd.Categories
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Image | Part Number | Price (excluding tax) | Wafer size | thickness | Direction | Crystal development method | Dopant | Density | Resistance value | Radial ratio resistance change amount | Parallelity | Primary flat | Front | Particle (MAX) | Scratch, chips, peel, etc. | Back | inch | Polishing surface | Substrate thickness | Ratio resistance | particle |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Test Wake Ha-N type 150mm SCL |
Available upon quote |
150 ± 0.5mm |
675 ± 25um |
<100> ± 2 ° |
(1-100) cz |
Rin (P) |
<5,000/cm² |
4 ~ 7ohm.cm |
15% |
Bow (Max): 60um |
Length: 57.5 ± 2.5mm |
Mirror polishing |
≧ 0.3um, 30 |
none |
Etched |
- | - | - | - | - | |
Monitor/Dummy SI Waeha |
Available upon quote | - | - |
4 inches: (100) or (111) |
- | - | - | - | - | - | - | - | - | - | - |
4-12 |
4 ~ 8 inches: one side |
250 ~ 775UM |
0 ~ 100 |
4 ~ 8 inches: 0.2um ≦ 30 pieces |
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