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DOWA Electronics Co., Ltd.'s GaN Power Devices

DOWA Electronics Co., Ltd.

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Nitride epitaxial substrate GaN on Si HEMT-DOWA Electronics Co., Ltd.

DOWA Electronics Co., Ltd.

Nitride epitaxial substrate GaN on Si HEMT

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Gallium nitride (GaN) is a wide bandgap material used in next-generation power semiconductors and high-frequency devices. Our gallium nitride epita...



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