Isahaya Electronics Co., Ltd.'s Field Effect Transistors (FET)

2SJ125 is an ultra-small external resin-sealed silicon P-channel junction field effect transistor designed and manufactured for use in low frequenc...

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• Field Effect Transistors (FET)

2SJ145 is an ultra-small external resin-sealed silicon P-channel junction field effect transistor designed and manufactured for use in low-frequenc...

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• Field Effect Transistors (FET)

2SJ498 is a small resin-sealed P-channel junction field effect transistor designed and manufactured for use in low-frequency voltage amplification ...

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• Field Effect Transistors (FET)

The 2SK2880 is a small resin-sealed N-channel junction field effect transistor designed and manufactured for use in low frequency voltage amplifica...

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• Field Effect Transistors (FET)

The 2SK2881 is a small resin-sealed N-channel junction field effect transistor designed and manufactured for low-frequency, low-noise amplificatio...

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• Field Effect Transistors (FET)

2SK433 is an ultra-small resin-sealed silicon N-channel junction field effect transistor designed and manufactured for use in low-frequency voltage...

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• Field Effect Transistors (FET)

2SK492 is an ultra-small resin-sealed silicon N-channel junction field effect transistor designed and manufactured for use in low-frequency voltage...

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• Field Effect Transistors (FET)

2SK492 is an ultra-small resin-sealed silicon N-channel junction field effect transistor designed and manufactured for use in low-frequency voltage...

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• Field Effect Transistors (FET)

2SK930 is an ultra-small external resin-sealed silicon N-channel junction field effect transistor designed and manufactured for use in low frequenc...

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• Field Effect Transistors (FET)

INJ0001AX is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, mak...

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• Field Effect Transistors (FET)

INJ0002AX is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, mak...

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• Field Effect Transistors (FET)

INJ0003AX is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, mak...

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• Field Effect Transistors (FET)

INJ0011AX is an ultra-small external resin-encapsulated silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistanc...

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• Field Effect Transistors (FET)

INJ0011AC1 is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, ma...

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• Field Effect Transistors (FET)

INJ0011AM1 is an ultra-small external resin-encapsulated silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistan...

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• Field Effect Transistors (FET)

INJ0043AM1 is an ultra-small resin-encapsulated silicon P-channel MOS transistor. The drive voltage is designed to be low, making it ideal for low ...

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• Field Effect Transistors (FET)

INJ0103AC1 is an ultra-small resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it i...

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• Field Effect Transistors (FET)

INJ0103AM1 is an ultra-small resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, making it i...

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• Field Effect Transistors (FET)

INJ0203AC1 is an ultra-small external resin-sealed silicon P-channel MOS transistor. It is designed for low voltage drive and low ON resistance, ma...

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• Field Effect Transistors (FET)