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  4. Plasma CVD system PlasmaPro 100 PECVD (Oxford Instruments Ltd.)
Plasma CVD system PlasmaPro 100 PECVD-PlasmaPro 100 PECVD
Plasma CVD system PlasmaPro 100 PECVD-Oxford Instruments Ltd.

Plasma CVD system PlasmaPro 100 PECVD
Oxford Instruments Ltd.

Oxford Instruments Ltd.'s Response Status

Response Rate

100.0%

Response Time

26.3hours

Relatively Fast Response

About This Product

The PlasmaPro 100 PECVD system is a specially designed system for producing high-quality thin films with excellent uniformity and controlled film properties such as refractive index, stress, electrical properties, and wet chemical etch rate. Our state-of-the-art plasma CVD systems are suitable for dielectric passivation, silicon carbide, amorphous silicon, hardmask deposition, and anti-reflective coatings.

■Features

・High quality, high throughput, and highly homogeneous film formation possible ・High control of refractive index and stress ・Deposition in high concentration plasma and low pressure ・Supports wafers up to 200 mm ・Quick exchange of wafers of different sizes is possible ・Both low ownership cost and maintainability ・Up to 400℃ or 1200℃ possible with resistance heating electrode ・In-situ chamber cleaning and termination determination possible ・Since reactive species are supplied to the substrate and passed through the chamber in a uniform, highly conductive path, a large flow rate of gas can be used while maintaining a low pressure. ・The RF power showerhead, which enables optimal gas supply, achieves uniform plasma treatment, and LF/RF switching enables precise control of film stress. ・Supports a wide range of process pressures with high pump capacity

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    Plasma CVD system PlasmaPro 100 PECVD

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1 Models of Plasma CVD system PlasmaPro 100 PECVD

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Plasma CVD system PlasmaPro 100 PECVD-Part Number-PlasmaPro 100 PECVD

PlasmaPro 100 PECVD

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Oxford Instruments Ltd.

Response Rate

100.0%

Response Time

26.3hrs

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