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  4. Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system (Oxford Instruments Ltd.)
Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system-PlasmaPro 100 Cobra ICP
Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system-Oxford Instruments Ltd.

Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system
Oxford Instruments Ltd.

Oxford Instruments Ltd.'s Response Status

Response Rate

100.0%

Response Time

26.3hours

Relatively Fast Response

About This Product

■Summary

The PlasmaPro 100 Cobra ICP RIE system uses high-density inductively coupled plasma to achieve fast etch rates. This process module supports wafer sizes up to 200mm and provides excellent uniformity and We offer high-throughput, high-precision, low-damage processes.

■Function

Deliver reactive species to the substrate through a uniform, highly conductive path within the chamber: high gas flow rates can be used while keeping chamber pressure low, providing a wide process window for advanced application development. ・Employs a wide temperature range electrode that can cool down to -20°C with a liquid circulation refrigerator, -150°C with liquid nitrogen, or heat up to 400°C with resistance heating: Mode switching is possible with the optional blowout/fluid exchange unit. can be automated, and the transition from -20℃ to -150℃ can be completed in as little as 10 minutes. ・Fluid control electrode supplied by recirculating chiller unit: achieves excellent substrate temperature control ・65mm or 300mm ICP plasma source: 300mm plasma source for excellent process uniformity up to 200mm wafers ・Wafer clamping with He backside cooling: Optimal temperature management of wafers

  • Product

    Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system

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1 Models of Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system

Image Part Number Price (excluding tax) Temperature range Clustering Wafer size ICP plasma source
Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system-Part Number-PlasmaPro 100 Cobra ICP

PlasmaPro 100 Cobra ICP

Available upon quote

-150~400℃​

Up to 5 modules including technologies such as ALD, PECVD, ion beam etching, and ion beam deposition

Maximum 200mm

65mm or 300mm

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About Company Handling This Product

Oxford Instruments Ltd.

Response Rate

100.0%

Response Time

26.3hrs

  • Japan

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