Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system
Oxford Instruments Ltd.
About This Product
■Summary
The PlasmaPro 100 Cobra ICP RIE system uses high-density inductively coupled plasma to achieve fast etch rates. This process module supports wafer sizes up to 200mm and provides excellent uniformity and We offer high-throughput, high-precision, low-damage processes.
■Function
Deliver reactive species to the substrate through a uniform, highly conductive path within the chamber: high gas flow rates can be used while keeping chamber pressure low, providing a wide process window for advanced application development.
・Employs a wide temperature range electrode that can cool down to -20°C with a liquid circulation refrigerator, -150°C with liquid nitrogen, or heat up to 400°C with resistance heating: Mode switching is possible with the optional blowout/fluid exchange unit. can be automated, and the transition from -20℃ to -150℃ can be completed in as little as 10 minutes.
・Fluid control electrode supplied by recirculating chiller unit: achieves excellent substrate temperature control
・65mm or 300mm ICP plasma source: 300mm plasma source for excellent process uniformity up to 200mm wafers
・Wafer clamping with He backside cooling: Optimal temperature management of wafers
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Product
Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system
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Handling Company
Oxford Instruments Ltd.
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Categories
1 Models of Achieving high-speed etching rates PlasmaPro 100 Cobra ICP RIE etching system
| Product Image | Part Number | Price (excluding tax) | Clustering | ICP plasma source | Temperature range | Wafer size |
|---|---|---|---|---|---|---|
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PlasmaPro 100 Cobra ICP |
Available upon quote | Up to 5 modules including technologies such as ALD, PECVD, ion beam etching, and ion beam deposition | 65mm or 300mm | -150~400℃ | Maximum 200mm |
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About Company Handling This Product
- Japan