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  2. XCSW compound / semiconductor crystal SIC wafer Epitaxial board (Tours Co., Ltd.)
XCSW compound / semiconductor crystal SIC wafer Epitaxial board-SIC Waeha/4H
XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Tours Co., Ltd.

XCSW compound / semiconductor crystal SIC wafer Epitaxial board
Tours Co., Ltd.

Tours Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

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Company Review

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About This Product

■ XCSW

XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices. We provide SIC Waha for various devices such as phototone engineering, high temperature, high output, and high frequency.

■ Characteristics

・ We provide 6H-SIC, 4H-SIC with excellent band gap compared to SI. ・ 4hsic is useful for creating a power device.

  • Product

    XCSW compound / semiconductor crystal SIC wafer Epitaxial board

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5 Models of XCSW compound / semiconductor crystal SIC wafer Epitaxial board

Click on the part number for more information about each product

Image Part Number Price (excluding tax) Lattice constant Stacking sequence Band gap (EV) Density (kg.m³) Heat expansion coefficient (k) Thermal conductivity (W/MK) Refractive index Expenditure rate Insulated destruction electric clear intensity (V/m) Saturated drift speed (M/S) Electronic movement speed (V.S) Hall movement speed (V.S) Morse hardness grade Poly type Diameter (mm) Thickness (UM) Career type Dopant Horse resistance (ω ・ cm) Surface roughness FWHM (Arcsec) Micro defect density (cm⁻⁻) Direction OFF axis Primary flat Primary Flat (mm) Secondary flat Secondary flat length (mm) Surface finishing Effective diameter
XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Part Number-SIC Waeha/4H

SIC Waeha/4H

Available upon quote

a = 3.076å
c = 10.053å

ABCB

3.26

3.21^10³

4 ~ 5x10⁻⁶

490

No = 2.719
Ne = 2.777

9.6

2 ~ 4^10⁸

20^10⁵

800cm²

115cm²

~ 9

- - - - - - - - - - - - - - - - - -
XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Part Number-SIC Waeha/6H

SIC Waeha/6H

Available upon quote

a = 3.073å
c = 15.117å

ABCACB

3.03

3.21^10³

4 ~ 5x10⁻⁶

490

No = 2.707
Ne = 2.755

9.66

2 ~ 4^10⁸

20^10⁵

400cm²

90cm²

~ 9

- - - - - - - - - - - - - - - - - -
XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Part Number-6H-N type 2 "sic

6H-N type 2 "sic

Available upon quote - - - - - - - - - - - - -

Mass production
research
dummy

6H

50.8 ± 0.38

250/330/430

N

nitrogen

0.02 ~ 0.1

<0.5nm (SI side CMP polishing)
<1nm (C -side light polishing)

Mass production: <30
Research/dummy: <50

Mass production: ≦ 1, ≦ 10
Research: ≦ 30, ≦ 50
Dummy: ≦ 100*

<0001> ± 0.5 °

For 3.5 ° <11-20> ± 0.5 °

<1-100> ± 5 °

16 ± 1.7

SI side 90 °
C side 90 °

8 ± 1.7

One -sided or double -sided polishing

90% from the center

XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Part Number-2 "4H-SIC semi-insulation orn type

2 "4H-SIC semi-insulation orn type

Available upon quote - - - - - - - - - - - - -

Mass production
research
dummy

4H

50.8 ± 0.38

250/330/430

N or semi -insulating body

Nitrogen (N type only)

Hempering body:> 1E5
N type: 0.012 ~ 0.0028

<0.5nm (SI side CMP polishing)
<1nm (C -side light polishing)

Mass production: <30
Research/dummy: <50

Mass production: ≦ 1⁻, ≦ 10
Research: ≦ 30, ≦ 50
Dummy: ≦ 100*

<0001> ± 0.5 °

For 3.5 ° <11-20> ± 0.5 °

<1-100> ± 5 °

16 ± 1.7

SI side 90 °
C side 90 °

8 ± 1.7

One -sided or double -sided polishing

90% from the center

XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Part Number-3 "4H-SIC Hemorestation orn type

3 "4H-SIC Hemorestation orn type

Available upon quote - - - - - - - - - - - - -

Mass production
research
dummy

4H

76.2 ± 0.38

350/430 ± 25um

N or semi -insulating body

N type: nitrogen
Hempering body: v

Hempering body:> 1E5
N type: 0.015 ~ 0.028

<0.5nm (SI side CMP polishing)
<1nm (C -side light polishing)

Mass production: <30
Research/dummy: <50

Mass production: ≦ 1, ≦ 10cm⁻⁻
Research: ≦ 30, ≦ 50
Dummy: ≦ 100*

<0001> ± 0.5 °

For 4 ° or 8 ° <11-20> ± 0.5 °

N type: <1-100> ± 5 °
> Semiplantation: <11-20> ± 5 °

22.22 ± 3.17

SI side 90 °
C side 90 °

11 ± 1.7mm

One -sided or double -sided polishing

90% from the center

Click on the part number for more information about each product

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About Company Handling This Product

Tours Co., Ltd.

Response Rate

100.0%

Response Time

0.8hrs

Company Review

5.0
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