XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Tours Co., Ltd.

SIC Waeha/4H | XCSW compound / semiconductor crystal SIC wafer Epitaxial board
Tours Co., Ltd.


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Band gap (EV)

Density (kg.m³)

Electronic movement speed (V.S)

Expenditure rate

Hall movement speed (V.S)

Heat expansion coefficient (k)

Insulated destruction electric clear intensity (V/m)

Lattice constant

Morse hardness

Refractive index

Saturated drift speed (M/S)

Stacking sequence

Thermal conductivity (W/MK)

Career type

Diameter (mm)

Direction

Dopant

Effective diameter

FWHM (Arcsec)

Horse resistance (ω ・ cm)

Micro defect density (cm⁻⁻)

OFF axis

Poly type

Primary Flat (mm)

Primary flat

Secondary flat

Secondary flat length (mm)

Surface finishing

Surface roughness

Thickness (UM)

grade

See all 5 models in list
  • Part Number

    SIC Waeha/4H




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XCSW compound / semiconductor crystal SIC wafer Epitaxial board SIC Waeha/4H's performance table

Items marked with have different values ​​depending on the model number.

Product Image Price (excluding tax) Band gap (EV) Density (kg.m³) Electronic movement speed (V.S) Expenditure rate Hall movement speed (V.S) Heat expansion coefficient (k) Insulated destruction electric clear intensity (V/m) Lattice constant Morse hardness Refractive index Saturated drift speed (M/S) Stacking sequence Thermal conductivity (W/MK)
XCSW compound / semiconductor crystal SIC wafer Epitaxial board-Part Number-SIC Waeha/4H Available upon quote 3.26 3.21^10³ 800cm² 9.6 115cm² 4 ~ 5x10⁻⁶ 2 ~ 4^10⁸ a = 3.076å c = 10.053å ~ 9 No = 2.719 Ne = 2.777 20^10⁵ ABCB 490

There are 5 models for this product.

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About Company Handling This Product

Tours Co., Ltd.

  • Japan
  • Since 2016
  • 2 employees

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