XCSW compounds / semiconductor crystals GAN wafer dating tip boards-2 "~ 4" GAN substrate

XCSW compounds / semiconductor crystals GAN wafer dating tip boards
Tours Co., Ltd.

About This Product

■ XCSW
XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices.

We provide a GAN substrate with a low defective density grown by the technique of gardening (HVPE) from one piece. GAN, which has a low sensitivity as other III nitride for ionization, is a material suitable for space applications such as solar cell arrays, communications, high -outputs for monitoring satellites, and high -frequency devices. I am.

* Prices depend on specifications and quantities such as size.

Model
There are 2 models for this product.

Product
XCSW compounds / semiconductor crystals GAN wafer dating tip boards

Handling Company
Tours Co., Ltd.

*Please note that we may not be able to accommodate sample requests.

2 Models of XCSW compounds / semiconductor crystals GAN wafer dating tip boards

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Click on the part number for more information about each product

Product Image	Part Number	Price (excluding tax)	Additives (dope)	BOW	Conductive (type)	Defective density	Direction	Effective range	Metastatic density	Polishing	Primary flat	Primary length	Resistance value	Secondary flat	Secondary length	TTV	size	thickness
	2 "~ 4" GAN substrate	Available upon quote	UNDOED, Ge, Si, MG, FE	≦ 20 um	N (undope, si, ge) P (mg) Half (FE) * The type is determined by the dope type	≦ 2cm⁻⁻ > 2cm⁻⁻	C axis (0001) ± 0.5 ° A axis (11-20) ± 0.5 ° R axis (1-102) ± 0.5 ° M axis (10-10) ± 0.5 ° * Except for the C -axis, it may not be possible to provide it with the desired specification.	≧ 90%	<5x10⁸cm²	Epiledi polishing, RA <0.2nm Back side Fine Ground or Rough Grinded	(1-100) ± 0.5 ° * Main surface C axis	16mm	N type: <0.5OHM.cm Hempering body:> 10^⁶Ohm.cm	(11-20) ± 3 °	8 ± 1mm	≦ 15um	2 inches (50.8) m 4 inch (100.0) mm	260,330,430,500, others ± 20UM
	Chip processing GAN board	Available upon quote	-	≦ 20 um	-	0	C axis (0001) ± 0.5 °	≧ 90%	<5x10⁶cm²	Epiledi polishing, RA <0.2nm Back side Fine Ground or Rough Grinded	-	-	N type: <0.5OHM.cm Hempering body:> 10^⁶Ohm.cm	-	-	≦ 15um	5x5.5mm 10x10.5mm 14x15mm	230 ± 20um 280 ± 20um