XCSW compound / semiconductor crystal GE substrate / epitaxial wafer-VGF method germanium specification

epitaxial wafer
Tours Co., Ltd.

About This Product

■ XCSW
XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices.

GE (germanium) single crystal wafer, which has grown by three types of training methods such as VGF/LEC/CZ, will be provided from one to mass production.

* Prices depend on the quantity.

Model
There are 3 models for this product.

Product
XCSW compound / semiconductor crystal GE substrate / epitaxial wafer

Handling Company
Tours Co., Ltd.

*Please note that we may not be able to accommodate sample requests.

3 Models of XCSW compound / semiconductor crystal GE substrate / epitaxial wafer

Items marked with have different values depending on the model number.

Click on the part number for more information about each product

Part Number	Price (excluding tax)	Bow/Warp	Carrier concentration	Conductive	Crystal direction	Dopant	EPD (cm²)	Epiledi	Etch pit density	Laser marking	Mobility	Olifra (of)	Polishing	Primary flat length	Resistance value	Second Olifra	Second flat length	Substrate thickness	TIR	TTV	Training method	Wafer size	Wafer surface	package
VGF method germanium specification	Available upon quote	-	By request	N type, P type, undoped	(100), (111), (110)	GA or SB	-	Existence	<5,000/cm²	By request	-	EJ or US	-	-	0.001 ~ 80 ohm.cm	-	-	200 ~ 550um	-	-	Vertical chooling (VGF)	2,3,4,6 (inch)	Double -sided polishing/surface polishing/back etching	Individual cassette type package enclosed
CZ method germanium specification	Available upon quote	-	-	-/n/p	-	UNDOPED/SB/in OR GA	<5x10² <5x10³	-	-	-	-	-	-	-	> 35/<0.05/0.05 ~ 0.1	-	-	-	-	-	Chokur ski	-	-	-
4 -inch germanium for solar cells	Available upon quote	<10	0.26 ~ 2.24^¹⁸	P type	(100) 9 ° off <111> ± 0.5 °	GE-GA	<300	-	-	none	382 ~ 865cm²/V.S	N/A	Single -sided polishing/back side GROUND	32 ± 1mm	0.74 ~ 2.81^⁻⁻	N/A	N/A	175 ± 10um	N/A	<15	-	100 ± 0.25mm	-	-