VGF method germanium specification | XCSW compound / semiconductor crystal GE substrate / epitaxial wafer
Tours Co., Ltd.
Price (excluding tax)
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Carrier concentration
Conductive
Crystal direction
Dopant
Epiledi
Etch pit density
Laser marking
Olifra (of)
Resistance value
Substrate thickness
Training method
Wafer size
Wafer surface
package
EPD (cm²)
Bow/Warp
Mobility
Polishing
Primary flat length
Second Olifra
Second flat length
TIR
TTV
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Part Number
VGF method germanium specification
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Handling Company
Tours Co., Ltd.
XCSW compound / semiconductor crystal GE substrate / epitaxial wafer VGF method germanium specification's performance table
Items marked with have different values depending on the model number.
| Product Image | Price (excluding tax) | Carrier concentration | Conductive | Crystal direction | Dopant | Epiledi | Etch pit density | Laser marking | Olifra (of) | Resistance value | Substrate thickness | Training method | Wafer size | Wafer surface | package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Available upon quote | By request | N type, P type, undoped | (100), (111), (110) | GA or SB | Existence | <5,000/cm² | By request | EJ or US | 0.001 ~ 80 ohm.cm | 200 ~ 550um | Vertical chooling (VGF) | 2,3,4,6 (inch) | Double -sided polishing/surface polishing/back etching | Individual cassette type package enclosed |
There are 3 models for this product.
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About Company Handling This Product
- Japan
- Since 2016
- 2 employees