XCSW compound / semiconductor crystal SIC wafer Epitaxial board-SIC Waeha/4H

XCSW compound / semiconductor crystal SIC wafer Epitaxial board
Tours Co., Ltd.

About This Product

■ XCSW
XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology.

Currently, MBE or MOCVD handles LED, SIC and GAN for power devices. We provide SIC Waha for various devices such as phototone engineering, high temperature, high output, and high frequency.

■ Characteristics
・ We provide 6H-SIC, 4H-SIC with excellent band gap compared to SI.
・ 4hsic is useful for creating a power device.

Model
There are 5 models for this product.

Product
XCSW compound / semiconductor crystal SIC wafer Epitaxial board

Handling Company
Tours Co., Ltd.

*Please note that we may not be able to accommodate sample requests.

5 Models of XCSW compound / semiconductor crystal SIC wafer Epitaxial board

Items marked with have different values depending on the model number.

Click on the part number for more information about each product

Part Number	Price (excluding tax)	Band gap (EV)	Career type	Density (kg.m³)	Diameter (mm)	Direction	Dopant	Effective diameter	Electronic movement speed (V.S)	Expenditure rate	FWHM (Arcsec)	Hall movement speed (V.S)	Heat expansion coefficient (k)	Horse resistance (ω ・ cm)	Insulated destruction electric clear intensity (V/m)	Lattice constant	Micro defect density (cm⁻⁻)	Morse hardness	OFF axis	Poly type	Primary Flat (mm)	Primary flat	Refractive index	Saturated drift speed (M/S)	Secondary flat	Secondary flat length (mm)	Stacking sequence	Surface finishing	Surface roughness	Thermal conductivity (W/MK)	Thickness (UM)	grade
SIC Waeha/4H	Available upon quote	3.26	-	3.21^10³	-	-	-	-	800cm²	9.6	-	115cm²	4 ~ 5x10⁻⁶	-	2 ~ 4^10⁸	a = 3.076å c = 10.053å	-	~ 9	-	-	-	-	No = 2.719 Ne = 2.777	20^10⁵	-	-	ABCB	-	-	490	-	-
SIC Waeha/6H	Available upon quote	3.03	-	3.21^10³	-	-	-	-	400cm²	9.66	-	90cm²	4 ~ 5x10⁻⁶	-	2 ~ 4^10⁸	a = 3.073å c = 15.117å	-	~ 9	-	-	-	-	No = 2.707 Ne = 2.755	20^10⁵	-	-	ABCACB	-	-	490	-	-
6H-N type 2 "sic	Available upon quote	-	N	-	50.8 ± 0.38	<0001> ± 0.5 °	nitrogen	90% from the center	-	-	Mass production: <30 Research/dummy: <50	-	-	0.02 ~ 0.1	-	-	Mass production: ≦ 1, ≦ 10 Research: ≦ 30, ≦ 50 Dummy: ≦ 100*	-	For 3.5 ° <11-20> ± 0.5 °	6H	16 ± 1.7	<1-100> ± 5 °	-	-	SI side 90 ° C side 90 °	8 ± 1.7	-	One -sided or double -sided polishing	<0.5nm (SI side CMP polishing) <1nm (C -side light polishing)	-	250/330/430	Mass production research dummy
2 "4H-SIC semi-insulation orn type	Available upon quote	-	N or semi -insulating body	-	50.8 ± 0.38	<0001> ± 0.5 °	Nitrogen (N type only)	90% from the center	-	-	Mass production: <30 Research/dummy: <50	-	-	Hempering body:> 1E5 N type: 0.012 ~ 0.0028	-	-	Mass production: ≦ 1⁻, ≦ 10 Research: ≦ 30, ≦ 50 Dummy: ≦ 100*	-	For 3.5 ° <11-20> ± 0.5 °	4H	16 ± 1.7	<1-100> ± 5 °	-	-	SI side 90 ° C side 90 °	8 ± 1.7	-	One -sided or double -sided polishing	<0.5nm (SI side CMP polishing) <1nm (C -side light polishing)	-	250/330/430	Mass production research dummy
3 "4H-SIC Hemorestation orn type	Available upon quote	-	N or semi -insulating body	-	76.2 ± 0.38	<0001> ± 0.5 °	N type: nitrogen Hempering body: v	90% from the center	-	-	Mass production: <30 Research/dummy: <50	-	-	Hempering body:> 1E5 N type: 0.015 ~ 0.028	-	-	Mass production: ≦ 1, ≦ 10cm⁻⁻ Research: ≦ 30, ≦ 50 Dummy: ≦ 100*	-	For 4 ° or 8 ° <11-20> ± 0.5 °	4H	22.22 ± 3.17	N type: <1-100> ± 5 ° > Semiplantation: <11-20> ± 5 °	-	-	SI side 90 ° C side 90 °	11 ± 1.7mm	-	One -sided or double -sided polishing	<0.5nm (SI side CMP polishing) <1nm (C -side light polishing)	-	350/430 ± 25um	Mass production research dummy