XCSW compound / semiconductor crystal sapphire substrate nitride gallium
Tours Co., Ltd.
About This Product
■ XCSW
XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices.
We provide a wafer made of GAN (gallium nitride) on the sapphire substrate. You can also specify the film thickness of the conductive type or GAN membrane.
-
Product
XCSW compound / semiconductor crystal sapphire substrate nitride gallium
-
Handling Company
Tours Co., Ltd.
6 Models of XCSW compound / semiconductor crystal sapphire substrate nitride gallium
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Density | Direction | Dopant | GAN film thickness (UM) | Ratio resistance | Surface finishing | size |
|---|---|---|---|---|---|---|---|---|---|
|
|
2 inch sapphire substrate GAN conductive type N |
Available upon quote | <1x10⁸cm⁻⁻⁻ | C axis (0001) ± 1 ° |
Si Andp |
4,20,30 50,100 |
<0.05Ω.cm | One -sided or double -sided epiladish polishing | φ50mm |
|
|
2 inch sapphire substrate GAN conductive P |
Available upon quote | <1x10⁸cm⁻⁻⁻ | C axis (0001) ± 1 ° | Mg |
5,20,30 50,100 |
<1Ω.cm* | One -sided or double -sided epiladish polishing | φ50mm |
|
|
2 -inch sapphire substrate GAN conductive semi -insulination body |
Available upon quote | <1x10⁸cm⁻⁻⁻ | C axis (0001) ± 1 ° | Fe | 30,90 | <1x106Ω.cm | One -sided or double -sided epiladish polishing | φ50mm |
|
|
3 inch sapphire substrate GAN conductive N |
Available upon quote | <1x10⁸cm⁻⁻⁻ | C axis (0001) ± 1 ° |
Si Andp |
20,30 | <0.05Ω.cm | One -sided or double -sided epiladish polishing | φ76*mm |
|
|
3 -inch sapphire substrate GAN conductive semi -insulination body |
Available upon quote | <1x10⁸cm⁻⁻⁻ | C axis (0001) ± 1 ° | Fe | 20,30,90 | <1x106Ω.cm | One -sided or double -sided epiladish polishing | φ76*mm |
|
|
4 inch sapphire substrate GAN conductive type N |
Available upon quote | <1x10⁸cm⁻⁻⁻ | C axis (0001) ± 1 ° | Andp | Four | <0.05Ω.cm | One -sided or double -sided epiladish polishing | φ100mm |
Click on the part number for more information about each product
Other products of Tours Co., Ltd.
View more products of Tours Co., Ltd.
About Company Handling This Product
- Japan
- Since 2016
- 2 employees