Product
XCSW compounds / semiconductor crystal epitaxial SI wafer-si on siHandling Company
Tours Co., Ltd.Product Image | Part Number | Price (excluding tax) | Conductive | Direction | Dopant/TH> | Epitaxial layer specification: Epi thickness | Epitaxial layer specification: Measurement position | Epitaxial layer specification: Particle | Epitaxial layer specification: Structure | Epitaxial layer specification: dopant | Epitaxial layer specification: scratch chipping | Epitaxial layer specifications: propelled resistance | Epitaxial layer specifications: uniformity | Polishing | Primary flat length | Primary flat oriented | RPG | Ratio resistance | Training method | diameter | thickness |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Si on si |
Available upon quote | N | -100 | AS | 3 ± 2um |
1mm from the center, 4mm from the end 4 to 90 degrees |
≦ 30 at 0.3um | N/N+ | Phos | none | 2.5 ± 0.2Ω.cm | 5%or less | One -sided mirror polishing | 55 ~ 60mm | <110> | ≦ 15% | ≦ 0.005Ω.cm | Cz | 150mm | 625um |