Semiconductor crystal sapphire wafer-window / substrate
Tours Co., Ltd.
About This Product
■ Overview
It is not a natural stone jewel, but a highly purity artificial crystal mainly used in the optical field. Colorless and transparent. Sapphires with poor purity are slightly colored. If there are many chromiums in the impurities, it turns blue, and if there are many iron and titanium, it becomes blue.
■ Use
Optical window: It has 70 to 90%permeability in the wavelength band of 200 to 5,500 nm. We have a performance that is easy to handle in various fields such as heat resistance, thermal conductivity, chemical resistance, and insulation, and we also handle various processed products such as ultra -high vacuum windows that utilize strength (hardness). Masu. In the semiconductor field, there are GAN ON SAPPIHRE, ALN ON SAPPHIRE based on sapphire, etc., and we also use C side, A, R, M -side, etc.
■ Section of face
The C side is the most popular axial direction as a GAN epitaxical growth substrate. We also provide a direction that minimizes multiple reflexions such as C -axis and R axis in the femtosecond laser window.
C side = (0001)
A side = (11-20)
R side = (1-102)
M side = (10-10)
Random cut
・ Special direction
It is mainly used to grow the GAN epitaxial layer on the nutrition/semi -polarth C -axis plane substrate to improve the light emission efficiency. In general, GAN Epitaxy grows along the C -axis of the polarity axis, which causes powerful electric fields in the active layer quantum well in the GAN -based device, reducing light emitting efficiency. By developing a non -polar side GAN epitaxial, you may be able to overcome this physical phenomenon and improve light emission efficiency.
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Product
Semiconductor crystal sapphire wafer-window / substrate
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Handling Company
Tours Co., Ltd.
1 Models of Semiconductor crystal sapphire wafer-window / substrate
| Product Image | Part Number | Price (excluding tax) | Appeared elastic limit | Crossing rate | Crystal lattice constant | Crystal structure | DN/DT DN/DU = 0 | Expenditure rate | Heat expansion coefficient | Melting point | Morse hardness | Optical uniformity | Permeation range | Poisson ratio | Reflection loss | Refractive index | Thermal conductivity | Volume elasticity rate | Young's modulus | density | specific heat |
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AL2O3 (SAPPHIRE) |
Available upon quote | 275GPA | 148.1GPa | a = b = 4.758 å, c = 12.991å | Hexagonal |
13.7x10⁻⁶AT5.4um 1.5um (DN/DT DN/DT = 0:00) |
C axis parallel 11.5 (1MHz) |
C axis parallel 5.6x10⁻⁶K C Axial vertical 5.0x10⁻⁶/K |
2,040 ° C | 9 | ΔN <10⁻⁶/cm> | 180 ~ 5,500Nm | 0.25 | 11.7% of Jin light, abnormal light 14.2% (1.06UM double -sided) | No1.75449, NE1.74663 (1.06um) | 27.21W/ (MXK) AT300K (20 ℃) | 240GPA | 335GPA | 20 ℃/9.71W M/K | 419JKG⁻¹K⁻¹⁻¹ |
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About Company Handling This Product
- Japan
- Since 2016
- 2 employees