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  4. XCSW compound / semiconductor crystal FZ method Siliconweha (Tours Co., Ltd.)
XCSW compound / semiconductor crystal FZ method Siliconweha-FZ-Si
XCSW compound / semiconductor crystal FZ method Siliconweha-Tours Co., Ltd.

XCSW compound / semiconductor crystal FZ method Siliconweha
Tours Co., Ltd.

Tours Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

0.8hours

Company Review

5.0

Very Fast Response

About This Product

■ XCSW

XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices.

■ Characteristics

・ Silicon grown in the FZ method is a single crystal structure that is close to a low defective density and a small foreign substance content. ・ We will provide various SI wafers that have adjusted the resistance and conductive type according to the use of FZ development method as sub -streams.

  • Product

    XCSW compound / semiconductor crystal FZ method Siliconweha

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3 Models of XCSW compound / semiconductor crystal FZ method Siliconweha

Click on the part number for more information about each product

Image Part Number Price (excluding tax) Training method Conductive Direction φ diameter (inch) Resistance value (Ω ・ cm) diameter thickness Primary flat length Primary flat oriented Secondary flat length Secondary flat direction TTV BOW Warp Surface finishing LPD Back Chipping
XCSW compound / semiconductor crystal FZ method Siliconweha-Part Number-FZ-Si

FZ-Si

Available upon quote

Fz

N or p

<100> or <111>

3 ~ 8

> 1,000

150 ± 0.5mm

675 ± 15um

57.5 ± 2.5mm

<001> ± 1 °

none

none

≦ 5 um

≦ 40um

≦ 40um

Chemical mechanical polishing

≧ 0.3um at ≦ 15pcs

Etched

none

XCSW compound / semiconductor crystal FZ method Siliconweha-Part Number-NTDFZ-SI

NTDFZ-SI

Available upon quote

NTDFZ

N

<100> or <111>

3 ~ 8

30-800

150 ± 0.5mm

675 ± 15um

57.5 ± 2.5mm

<001> ± 1 °

none

none

≦ 5 um

≦ 40um

≦ 40um

Chemical mechanical polishing

≧ 0.3um at ≦ 15pcs

Etched

none

XCSW compound / semiconductor crystal FZ method Siliconweha-Part Number-Gdfz-si

Gdfz-si

Available upon quote

Gdfz

N or p

<100> or <111>

3 ~ 8

0.001 ~ 300

150 ± 0.5mm

675 ± 15um

57.5 ± 2.5mm

<001> ± 1 °

none

none

≦ 5 um

≦ 40um

≦ 40um

Chemical mechanical polishing

≧ 0.3um at ≦ 15pcs

Etched

none

Click on the part number for more information about each product

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About Company Handling This Product

Tours Co., Ltd.

Response Rate

100.0%

Response Time

0.8hrs

Company Review

5.0
  • Japan

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Silicon Wafers　Tours Co., Ltd.
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