FZ-Si | XCSW compound / semiconductor crystal FZ method Siliconweha
Tours Co., Ltd.
Price (excluding tax)
Model Description
It is a SI trained by the floating zone method. The resistance rate is 1,000 Ω.cm or more in silicon with a low foreign matter content and defective density.
Model Filter
You can search for other models from each index. The displayed value is the value of the currently selected part number.
BOW
Back
Chipping
Conductive
Direction
LPD
Primary flat length
Primary flat oriented
Resistance value (Ω ・ cm)
Secondary flat direction
Secondary flat length
Surface finishing
TTV
Training method
Warp
diameter
thickness
φ diameter (inch)
-
Part Number
FZ-Si
-
Handling Company
Tours Co., Ltd.
XCSW compound / semiconductor crystal FZ method Siliconweha FZ-Si's performance table
Items marked with have different values depending on the model number.
| Product Image | Price (excluding tax) | BOW | Back | Chipping | Conductive | Direction | LPD | Primary flat length | Primary flat oriented | Resistance value (Ω ・ cm) | Secondary flat direction | Secondary flat length | Surface finishing | TTV | Training method | Warp | diameter | thickness | φ diameter (inch) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Available upon quote | ≦ 40um | Etched | none | N or p | <100> or <111> | ≧ 0.3um at ≦ 15pcs | 57.5 ± 2.5mm | <001> ± 1 ° | > 1,000 | none | none | Chemical mechanical polishing | ≦ 5 um | Fz | ≦ 40um | 150 ± 0.5mm | 675 ± 15um | 3 ~ 8 |
There are 3 models for this product.
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About Company Handling This Product
- Japan
- Since 2016
- 2 employees