XCSW compound / semiconductor crystal epitaxial wafer base plate
Tours Co., Ltd.
About This Product
■ XCSW
XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices.
We handle various Ⅲ-ⅴ ⅲ 族 族。。。。。。。。。。。。。。。。。。。。。。 If you have a specific epi -layer structure, please let us know the detailed layer. Depending on the specific layer, we will provide it from one.
* Prices depend on the quantity.
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Product
XCSW compound / semiconductor crystal epitaxial wafer base plate
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Handling Company
Tours Co., Ltd.
10 Models of XCSW compound / semiconductor crystal epitaxial wafer base plate
Items marked with have different values depending on the model number.
Click on the part number for more information about each product
| Product Image | Part Number | Price (excluding tax) | Carrier concentration | Conductive | Density | Direction | Dopant | EDP | Effective range | Epitaxial layer | Film layer | LT-GAAS Epi layer thickness | Low -temperature growth temperature | Main board | Micro defect density | Olifra | PL wavelength | Resistance value (300k) | Substrate surface direction | Substrate thickness | Surface finishing | Thick thickness | Thickness of the membrane layer | Training method | XRD FWHM | diameter | distortion |
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Sapphire substrate for LD, LED Gan |
Available upon quote | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 430um | - | - | 0.2 ~ Um | MOCVD | - | φ50.8mm | - |
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Sapphire substrate ALN |
Available upon quote | - | Semi -insulter | - | C axis (0001) ± 1 ° | - | - | - | - | - | - | - | - | - | - | - | - | - | - | none | - | 1um ± 10% | - | - | φ50.8mm | - |
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Sapphire board INGAN |
Available upon quote | - | - | > 108cm⁻⁻ | C axis (0001) ± 1 ° | In | - | - | - | - | - | - | - | - | - | - | - | - | - | One -sided or double -sided epiledic polishing | - | 100 to 200um | - | - | φ50.8mm | - |
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Sapphire substrate ALGAN |
Available upon quote | - | Semi -insulter | - | C side | - | - | > 90% | - | - | - | - | - | - | A -side | - | - | - | - | - | - | 1um ± 10% | - | <200arcsec | φ50.8mm | - |
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GaaS board for THZ detection LT-GAAS |
Available upon quote | <0.5ps | UNDOPED/Semiplantation | <1x106cm⁻⁻ | - | - | - | ≧ 80% | - | - | 1 ~ 3um | 200-250 ° C | - | ≦ 5cm⁻⁻ | - | - | > 108OHM-CM | -100 | 350um, 500um | - | - | - | - | - | φ50.8mm | - |
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INP board for PIN INGAAS |
Available upon quote | - | - | <1x10^⁴/cm^² | - | FE (semi -insulter) | - | - | - | - | - | - | - | - | - | - | > 1x10^⁷Ohm.cm | -100 | - | - | - | - | - | - | φ50.8mm | - |
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1.55UMQW for laser INP board INGAASP/INGAAS |
Available upon quote | - | - | - | - | - | - | - | 8 ~ 20 | INGAASP/INGAAS | - | - | S Dope INP | - | - | 1,500 ± 3 ~ 5nm | - | - | - | - | 1.0 ~ 3.0um | - | MOCVD | - | φ50.8mm | -1.0 ± 0.1% |
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GaaS substrate ALAS |
Available upon quote | > E18Ω.cm (regardless of the conductive type) | N or P (semi -insulator) * Selectable | - | - | - | - | - | - | GaaS and Alas | - | - | Gaas | - | - | - | - | - | 350um | - | - | - | - | - | φ50.8mm | - |
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INP substrate INGAAS/INP |
Available upon quote | - | N | - | (100) ± 0.5 ° | S | <1E4/cm² | - | - | - | - | - | Inp | - | - | - | - | - | 350 ± 25um | Single -sided polishing, back -side etched SEMI compliant | - | - | - | - | φ50.8mm | - |
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GAN substrate INGAAS/INP |
Available upon quote | - | N | - | (100) ± 0.5 ° | S | <1E4/cm² | - | - | - | - | - | Gan | - | - | - | - | - | 350um | - | - | - | - | - | φ50.8mm | - |
Click on the part number for more information about each product
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About Company Handling This Product
- Japan
- Since 2016
- 2 employees