1.55UMQW for laser INP board INGAASP/INGAAS | XCSW compound / semiconductor crystal epitaxial wafer base plate
Tours Co., Ltd.
Price (excluding tax)
Model Filter
You can search for other models from each index. The displayed value is the value of the currently selected part number.
Substrate thickness
Thickness of the membrane layer
Training method
diameter
Conductive
Direction
Surface finishing
Density
Dopant
Effective range
Olifra
XRD FWHM
Carrier concentration
LT-GAAS Epi layer thickness
Low -temperature growth temperature
Micro defect density
Resistance value (300k)
Substrate surface direction
Epitaxial layer
Film layer
Main board
PL wavelength
Thick thickness
distortion
EDP
-
Part Number
1.55UMQW for laser INP board INGAASP/INGAAS
-
Handling Company
Tours Co., Ltd.
XCSW compound / semiconductor crystal epitaxial wafer base plate 1.55UMQW for laser INP board INGAASP/INGAAS's performance table
Items marked with have different values depending on the model number.
| Product Image | Price (excluding tax) | Epitaxial layer | Film layer | Main board | PL wavelength | Thick thickness | Training method | diameter | distortion |
|---|---|---|---|---|---|---|---|---|---|
|
|
Available upon quote | 8 ~ 20 | INGAASP/INGAAS | S Dope INP | 1,500 ± 3 ~ 5nm | 1.0 ~ 3.0um | MOCVD | φ50.8mm | -1.0 ± 0.1% |
There are 10 models for this product.
Other products of Tours Co., Ltd.
View more products of Tours Co., Ltd.
About Company Handling This Product
- Japan
- Since 2016
- 2 employees