Semiconductor crystal GE single crystal substrate / wafer-GE
Semiconductor crystal GE single crystal substrate / wafer-Tours Co., Ltd.

Semiconductor crystal GE single crystal substrate / wafer
Tours Co., Ltd.


About This Product

■ supplier Japan, China, the United States, Germany, UK ■ optical characteristics Germanium has a wide permeation range of 2 to 23UMs, with a transmittance of about 50%up to 2 to 15 um. It drops at 16um to about 20%for 23UM and 20%for 25um. Silver and strong reflection against visible light. The transmittance is reduced at a temperature of 100 ° C or higher, without responding to water, oxygen, alkaline, etc. As a lens, the refractive index is large and can minimize chromatic aberration. It is used as a general material in an IR system that operates within the wavelength range of 3 to 5 um or 8 to 12 um. It is also used as an electromagnetic interference shielding material (EMI), and a 4-6Ω low -resistance EMI grade GE can be shielded from electromagnetic obstruction within the millimeter and centimeters. The ultraviolet region and the visible light area are cut off (not transmitted), and the density is 5.323g/mm³, the highest density of the infrared transparency cormorant, and due to these characteristics, the combination of visible or infrared light. Depending on the weight limit, it is also a material that can be used. The GE window made in the UK offers products that are suitable for laser applications such as infrared heat line images, high temperature measurement, and spectroscopy method. The diameter is φ300mm, which is a very large size.

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    Semiconductor crystal GE single crystal substrate / wafer




*Please note that we may not be able to accommodate sample requests.

1 Models of Semiconductor crystal GE single crystal substrate / wafer

Product Image Part Number Price (excluding tax) Absorption coefficient Crystal structure Expenditure rate Heat expansion coefficient Melting point Morse hardness Poisson ratio Reflection loss Refractive index Thermal conductivity Young's modulus density specific heat
Semiconductor crystal GE single crystal substrate / wafer-Part Number-GE

GE

Available upon quote <0.003/cm Legislation crystal 16.6/9.37GHz/300k 5.7x10⁻⁶/℃ 936 ℃ 6 0.28 53% 4.0026 0.59W/cm/℃ 102.7GPA 5.32g/cm³ 0.31J/g/℃

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About Company Handling This Product

Tours Co., Ltd.

  • Japan
  • Since 2016
  • 2 employees

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