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  2. XCSW compound / semiconductor crystal epitaxial wafer base plate (Tours Co., Ltd.)
XCSW compound / semiconductor crystal epitaxial wafer base plate-Sapphire substrate for LD, LED Gan
XCSW compound / semiconductor crystal epitaxial wafer base plate-Tours Co., Ltd.

XCSW compound / semiconductor crystal epitaxial wafer base plate
Tours Co., Ltd.

Tours Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

0.8hours

Company Review

5.0

Very Fast Response

About This Product

■ XCSW

XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices. We handle various Ⅲ-ⅴ ⅲ 族 族。。。。。。。。。。。。。。。。。。。。。。 If you have a specific epi -layer structure, please let us know the detailed layer. Depending on the specific layer, we will provide it from one. * Prices depend on the quantity.

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    XCSW compound / semiconductor crystal epitaxial wafer base plate

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10 Models of XCSW compound / semiconductor crystal epitaxial wafer base plate

Click on the part number for more information about each product

Image Part Number Price (excluding tax) Training method diameter Substrate thickness Thickness of the membrane layer Conductive Direction Surface finishing Dopant Density Olifra XRD FWHM Effective range LT-GAAS Epi layer thickness Low -temperature growth temperature Substrate surface direction Micro defect density Resistance value (300k) Carrier concentration Main board Film layer PL wavelength distortion Epitaxial layer Thick thickness EDP
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-Sapphire substrate for LD, LED Gan

Sapphire substrate for LD, LED Gan

Available upon quote

MOCVD

φ50.8mm

430um

0.2 ~ Um

- - - - - - - - - - - - - - - - - - - - -
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-Sapphire substrate ALN

Sapphire substrate ALN

Available upon quote -

φ50.8mm

-

1um ± 10%

Semi -insulter

C axis (0001) ± 1 °

none

- - - - - - - - - - - - - - - - - -
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-Sapphire board INGAN

Sapphire board INGAN

Available upon quote -

φ50.8mm

-

100 to 200um

-

C axis (0001) ± 1 °

One -sided or double -sided epiledic polishing

In

> 108cm⁻⁻

- - - - - - - - - - - - - - - -
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-Sapphire substrate ALGAN

Sapphire substrate ALGAN

Available upon quote -

φ50.8mm

-

1um ± 10%

Semi -insulter

C side

- - -

A -side

<200arcsec

> 90%

- - - - - - - - - - - - -
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-GaaS board for THZ detection LT-GAAS

GaaS board for THZ detection LT-GAAS

Available upon quote -

φ50.8mm

350um, 500um

-

UNDOPED/Semiplantation

- - -

<1x106cm⁻⁻

- -

≧ 80%

1 ~ 3um

200-250 ° C

-100

≦ 5cm⁻⁻

> 108OHM-CM

<0.5ps

- - - - - - -
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-INP board for PIN INGAAS

INP board for PIN INGAAS

Available upon quote -

φ50.8mm

- - - - -

FE (semi -insulter)

<1x10^⁴/cm^²

- - - - -

-100

-

> 1x10^⁷Ohm.cm

- - - - - - - -
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-1.55UMQW for laser INP board INGAASP/INGAAS

1.55UMQW for laser INP board INGAASP/INGAAS

Available upon quote

MOCVD

φ50.8mm

- - - - - - - - - - - - - - - -

S Dope INP

INGAASP/INGAAS

1,500 ± 3 ~ 5nm

-1.0 ± 0.1%

8 ~ 20

1.0 ~ 3.0um

-
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-GaaS substrate ALAS

GaaS substrate ALAS

Available upon quote -

φ50.8mm

350um

-

N or P (semi -insulator) * Selectable

- - - - - - - - - - - -

> E18Ω.cm (regardless of the conductive type)

Gaas

GaaS and Alas

- - - - -
XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-INP substrate INGAAS/INP

INP substrate INGAAS/INP

Available upon quote -

φ50.8mm

350 ± 25um

-

N

(100) ± 0.5 °

Single -sided polishing, back -side etched SEMI compliant

S

- - - - - - - - - -

Inp

- - - - -

<1E4/cm²

XCSW compound / semiconductor crystal epitaxial wafer base plate-Part Number-GAN substrate INGAAS/INP

GAN substrate INGAAS/INP

Available upon quote -

φ50.8mm

350um

-

N

(100) ± 0.5 °

-

S

- - - - - - - - - -

Gan

- - - - -

<1E4/cm²

Click on the part number for more information about each product

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About Company Handling This Product

Tours Co., Ltd.

Response Rate

100.0%

Response Time

0.8hrs

Company Review

5.0
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