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  4. XCSW compound / semiconductor crystal sapphire substrate nitride gallium (Tours Co., Ltd.)
XCSW compound / semiconductor crystal sapphire substrate nitride gallium-2 inch sapphire substrate GAN conductive type N
XCSW compound / semiconductor crystal sapphire substrate nitride gallium-Tours Co., Ltd.

XCSW compound / semiconductor crystal sapphire substrate nitride gallium
Tours Co., Ltd.

Tours Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

0.8hours

Company Review

5.0

Very Fast Response

About This Product

■ XCSW

XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices. We provide a wafer made of GAN (gallium nitride) on the sapphire substrate. You can also specify the film thickness of the conductive type or GAN membrane.

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    XCSW compound / semiconductor crystal sapphire substrate nitride gallium

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6 Models of XCSW compound / semiconductor crystal sapphire substrate nitride gallium

Click on the part number for more information about each product

Image Part Number Price (excluding tax) size Direction Dopant GAN film thickness (UM) Ratio resistance Density Surface finishing
XCSW compound / semiconductor crystal sapphire substrate nitride gallium-Part Number-2 inch sapphire substrate GAN conductive type N

2 inch sapphire substrate GAN conductive type N

Available upon quote

φ50mm

C axis (0001) ± 1 °

Si
Andp

4,20,30
50,100

<0.05Ω.cm

<1x10⁸cm⁻⁻⁻

One -sided or double -sided epiladish polishing

XCSW compound / semiconductor crystal sapphire substrate nitride gallium-Part Number-2 inch sapphire substrate GAN conductive P

2 inch sapphire substrate GAN conductive P

Available upon quote

φ50mm

C axis (0001) ± 1 °

Mg

5,20,30
50,100

<1Ω.cm*

<1x10⁸cm⁻⁻⁻

One -sided or double -sided epiladish polishing

XCSW compound / semiconductor crystal sapphire substrate nitride gallium-Part Number-2 -inch sapphire substrate GAN conductive semi -insulination body

2 -inch sapphire substrate GAN conductive semi -insulination body

Available upon quote

φ50mm

C axis (0001) ± 1 °

Fe

30,90

<1x106Ω.cm

<1x10⁸cm⁻⁻⁻

One -sided or double -sided epiladish polishing

XCSW compound / semiconductor crystal sapphire substrate nitride gallium-Part Number-3 inch sapphire substrate GAN conductive N

3 inch sapphire substrate GAN conductive N

Available upon quote

φ76*mm

C axis (0001) ± 1 °

Si
Andp

20,30

<0.05Ω.cm

<1x10⁸cm⁻⁻⁻

One -sided or double -sided epiladish polishing

XCSW compound / semiconductor crystal sapphire substrate nitride gallium-Part Number-3 -inch sapphire substrate GAN conductive semi -insulination body

3 -inch sapphire substrate GAN conductive semi -insulination body

Available upon quote

φ76*mm

C axis (0001) ± 1 °

Fe

20,30,90

<1x106Ω.cm

<1x10⁸cm⁻⁻⁻

One -sided or double -sided epiladish polishing

XCSW compound / semiconductor crystal sapphire substrate nitride gallium-Part Number-4 inch sapphire substrate GAN conductive type N

4 inch sapphire substrate GAN conductive type N

Available upon quote

φ100mm

C axis (0001) ± 1 °

Andp

4

<0.05Ω.cm

<1x10⁸cm⁻⁻⁻

One -sided or double -sided epiladish polishing

Click on the part number for more information about each product

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About Company Handling This Product

Tours Co., Ltd.

Response Rate

100.0%

Response Time

0.8hrs

Company Review

5.0
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