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  4. XCSW compounds / semiconductor crystals GAN wafer dating tip boards (Tours Co., Ltd.)
XCSW compounds / semiconductor crystals GAN wafer dating tip boards-2 "~ 4" GAN substrate
XCSW compounds / semiconductor crystals GAN wafer dating tip boards-Tours Co., Ltd.

XCSW compounds / semiconductor crystals GAN wafer dating tip boards
Tours Co., Ltd.

Tours Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

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Company Review

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Very Fast Response

About This Product

■ XCSW

XCSW is a compound semiconductor material company founded in Amoi, China in 1990. On the Ⅲ-al, in, as, p based on the Ⅲ-ⅴ tribe silicopop N-type semiconductor, the first generation GE wafer and the second generation gallium linery have been developed a substrate growth epitrical technology. Currently, MBE or MOCVD handles LED, SIC and GAN for power devices. We provide a GAN substrate with a low defective density grown by the technique of gardening (HVPE) from one piece. GAN, which has a low sensitivity as other III nitride for ionization, is a material suitable for space applications such as solar cell arrays, communications, high -outputs for monitoring satellites, and high -frequency devices. I am. * Prices depend on specifications and quantities such as size.

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    XCSW compounds / semiconductor crystals GAN wafer dating tip boards

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2 Models of XCSW compounds / semiconductor crystals GAN wafer dating tip boards

Click on the part number for more information about each product

Image Part Number Price (excluding tax) size thickness Additives (dope) Conductive (type) Direction Primary flat Primary length Secondary flat Secondary length Resistance value Metastatic density Defective density TTV BOW Polishing Effective range
XCSW compounds / semiconductor crystals GAN wafer dating tip boards-Part Number-2 "~ 4" GAN substrate

2 "~ 4" GAN substrate

Available upon quote

2 inches (50.8) m
4 inch (100.0) mm

260,330,430,500, others
± 20UM

UNDOED, Ge, Si, MG, FE

N (undope, si, ge)
P (mg)
Half (FE)
* The type is determined by the dope type

C axis (0001) ± 0.5 ° A axis (11-20) ± 0.5 °
R axis (1-102) ± 0.5 ° M axis (10-10) ± 0.5 °
* Except for the C -axis, it may not be possible to provide it with the desired specification.

(1-100) ± 0.5 ° * Main surface C axis

16mm

(11-20) ± 3 °

8 ± 1mm

N type: <0.5OHM.cm
Hempering body:> 10^⁶Ohm.cm

<5x10⁸cm²

≦ 2cm⁻⁻
> 2cm⁻⁻

≦ 15um

≦ 20 um

Epiledi polishing, RA <0.2nm
Back side Fine Ground or Rough Grinded

≧ 90%

XCSW compounds / semiconductor crystals GAN wafer dating tip boards-Part Number-Chip processing GAN board

Chip processing GAN board

Available upon quote

5x5.5mm
10x10.5mm
14x15mm

230 ± 20um
280 ± 20um

- -

C axis (0001) ± 0.5 °

- - - -

N type: <0.5OHM.cm
Hempering body:> 10^⁶Ohm.cm

<5x10⁶cm²

0

≦ 15um

≦ 20 um

Epiledi polishing, RA <0.2nm
Back side Fine Ground or Rough Grinded

≧ 90%

Click on the part number for more information about each product

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About Company Handling This Product

Tours Co., Ltd.

Response Rate

100.0%

Response Time

0.8hrs

Company Review

5.0
  • Japan

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Gallium Nitride
Gallium Nitride　Tours Co., Ltd.
Tours Co., Ltd.

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