Plasma CVD experimental equipment PCVD-R100
Arios Co., Ltd.
About This Product
■Summary
CVD is an abbreviation for Chemical Vapor Deposition, and refers to the process of supplying a raw material with gas, decomposing it with plasma or heat, and forming a film using the components. There are various methods, but the most commonly used are those that use heat or plasma. There are various types of plasma generation depending on the frequency. Arios designs and manufactures various plasma CVD equipment. For details, please refer to Microwave (2.45GHz) vsRF (13.56MHz).
This equipment is a plasma CVD equipment compatible with experimental MO raw materials, and is equipped with an RF plasma source, substrate heating mechanism, gas supply system, load lock chamber, etc., and is capable of plasma processing various raw material gases to form thin films on substrates. is.
■Features
- Utilizes Arios' high vacuum technology, allowing film deposition experiments in a clean vacuum.
- Compact chamber + simple configuration allows for easy maintenance.
- The substrate heating mechanism is made of materials with excellent heat resistance and gas resistance, allowing stable heating for long periods of time.
- Board installation can be done extremely easily and in a short time without exposing to the atmosphere due to the load lock mechanism.
■Options
・MO gas supply system
・Parallel plate electrode + shower head
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Product
Plasma CVD experimental equipment PCVD-R100
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Handling Company
Arios Co., Ltd.
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Categories
1 Models of Plasma CVD experimental equipment PCVD-R100
| Product Image | Part Number | Price (excluding tax) | Board size | Gas supply system | Load lock chamber | Main body stand | Plasma source | Reaction chamber | Substrate heating mechanism | Utility | Vacuum exhaust system |
|---|---|---|---|---|---|---|---|---|---|---|---|
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PCVD-R100 |
Available upon quote | ~φ100 | MFC + valves |
Made of SUS 304 Hatch port + O-ring type transfer rod |
With casters and adjusters |
RF: 0~500W variable + automatic matching BOX (inductive coupling or capacitive coupling) Reaction tube: φ40×36 quartz tube |
Made of SUS 304 |
Maximum heating temperature: 900℃ Board position: variable up and down Power supply: DC power supply + temperature controller |
Three-phase AC200V 60A Single phase AC100V 10A Cooling water 1 L⁄min |
Load lock room: TMP+RP Reaction chamber: RP + trap |
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About Company Handling This Product
- Japan