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Azimuth plane
Board structure
Conductive type
Diameter
Effective area
Electrical resistivity (300K)
GaN film thickness
Orientation flat direction. length
Packing method
Surface finish
Transition defect density
Part Number
GaN-T-C-N-C50Product
2 inch GaN templateHandling Company
Toyominato Co., Ltd.Categories
Image | Price (excluding tax) | Azimuth plane | Board structure | Conductive type | Diameter | Effective area | Electrical resistivity (300K) | GaN film thickness | Orientation flat direction. length | Packing method | Surface finish | Transition defect density |
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Available upon quote | C plane (0001) plane ± 0.5° | GaN/sapphire wafer (0001) surface | N type (Undoped) N type (Si-doped) | Φ50.8mm ± 0.1mm | 90% or more | <0.5Ω・cm <0.05Ω・cm | 4um 10~25um | Orientation flat direction (1-100) Orientation flat length 16 ± 1mm | Filled with nitrogen in a clean room Packed individually or in a cassette of 25 sheets | Ga side: CMP finish N side: Fine grounding (Option: Optical mirror finish) | 5×108 pieces/cm2 or less |
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