Source Mini electron beam evaporator EBV40A1
Kitano Seiki Co., Ltd.
About This Product
■Summary
EBV40A1 is a device developed for producing films of several atomic layers or as a dopant for multilayer films produced using MBE equipment. By precisely controlling the amount of evaporation while monitoring the flux, it is possible to create a film of 1/10 layer per minute. Furthermore, by evaporating under ultra-high vacuum, it is possible to grow films with extremely high purity.
Controlling the amount of evaporation also has an effective effect on the uniformity of the film produced. The area of film formation on the substrate is determined by the distance between the source tip and the substrate and the size of the nozzle exit aperture. A manual shutter is standard equipment, but we can also accommodate requests for an automatic shutter driven by a motor.
■Features
・Simple design with ICF70 mounting flange (outer diameter 70mm)
・Control the amount of evaporation of the material by monitoring the flux of the evaporation material (standard equipment)
- Vapor deposition materials can be replaced without removing the source of the electron beam evaporation equipment.
・The deposition material is loaded into the delivery mechanism and most of the material is consumed (standard equipment)
・Equipped with a manual shutter as standard, stopping vapor deposition immediately
・Uniform deposition on the substrate is possible with the nozzle attached to the tip of the source.
・Various crucibles tailored to vapor deposition materials
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Product
Source Mini electron beam evaporator EBV40A1
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Handling Company
Kitano Seiki Co., Ltd.
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Categories
1 Models of Source Mini electron beam evaporator EBV40A1
| Product Image | Part Number | Price (excluding tax) | Acceleration voltage | Bake temperature | Cooling water temperature | Deposition size | Mounting flange | Source length in vacuum | Tip mounting nozzle | Vapor deposition material (rod) size | Vapor deposition material heating temperature | Working distance |
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EBV40A1 |
Available upon quote |
0~1,500eV (Normal working voltage: 600~800eV) Maximum emission current: 200mA Maximum power: 300W |
~250℃ | 0~100℃ | Diameter 5~20mm | DN40CF (outer diameter 70mm) | Length 212mm, diameter 34.8mm | ID4 (inner diameter 4mm) ~ID19 (inner diameter 19mm) | 0.5~2.3mm | 160~2,300℃ (When using molybdenum connector: 3,300℃) | 25~75m (estimated working distance 70~75mm) |
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About Company Handling This Product
- Japan