Inorganic analysis silicon wafer oxygen analyzer O836Si type
LECO Japan LLC
About This Product
■Oxygen analyzer exclusively for silicon wafers developed to meet the demands of the silicon industry
The O836Si is an oxygen analyzer exclusively for silicon wafers, developed to meet the demand for low-concentration, high-precision oxygen analysis in the silicon industry. The combination of a highly accurate non-dispersive infrared detector, the latest sample loading system and a programmable impulse furnace enables accurate and highly accurate oxygen analysis.
■Analysis target
Silicon wafers, metals such as steel, etc.
Features and benefits
■Main features
・Highly accurate non-dispersive infrared detector for low concentrations
・Measurement results can also be displayed in ppma
■Functional sample loading area
・Uses a universally designed loading head that is compatible with both silicon wafers and block samples.
・Minimizes atmospheric entrainment when introducing samples
・Simplifies regular maintenance of sample drop mechanism
・OMI tube (reagent for removing oxygen and moisture in carrier gas) is easy to replace and can be bypassed to extend life.
■Highly reliable automation mechanism
・By installing the optional auto cleaner, manual cleaning between samples is minimized.
・Optional batch loader for 20 samples can also be installed.
■Others
・Ergonomic and intuitive operation is possible with the touch panel interface attached to the flexible arm.
・Pressure compensated, temperature controlled gas dosing system
・The latest piping minimizes joints that can cause damage or leaks.
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Product
Inorganic analysis silicon wafer oxygen analyzer O836Si type
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Handling Company
LECO Japan LLC
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Categories
1 Models of Inorganic analysis silicon wafer oxygen analyzer O836Si type
| Product Image | Part Number | Price (excluding tax) | Analysis range (sample weight 0.3 g) | Analysis time | Analytical accuracy (sample weight 0.3 g) | Calibration | Cooling water | Cycle time | Detection method | Furnace | Gas flow rate | Gas used Carrier gas | Gas used Driving gas | Gas used Gas dose | Operating environment | Power capacity | Reagent | Sample amount | Size | Weight |
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O836Si |
Available upon quote |
0.1 ppm~500 ppm *Analysis range varies depending on sample type and analysis parameters. |
Helium 110 seconds Argon 120 seconds |
Standard deviation (s) 0.05 ppm or RSD 0.3% *Whichever is larger *Analysis accuracy is the standard deviation (1s) of the instrument blank and varies depending on the sample type and analysis parameters. |
Standard sample / 1 point or multiple points / manual / gas dose | 3.2L, LECO Coolant |
Helium 280 seconds Argon 290 seconds |
Non-dispersive infrared absorption method | Electrode furnace, current/power control, max. 7500 W, water-cooled |
Carrier: 460 cc/min Driving gas: 280 cc/analysis |
Helium (99.99%), 0.15 MPa ±5% Argon (99.999%), 0.15 MPa ±5% |
Compressed air or nitrogen (no moisture or oil) 0.28 MPa ±10% | Carbon dioxide (99.99%), 0.14 MPa ±10% |
Temperature 15℃~35℃ Relative humidity 20%~80% (non-condensing) |
Single phase 200 V~ (+10/-15%: maximum output, boosted to 230 V), 50/60 Hz, 60 A, 12,500 BTU/hr *Average when operating under normal settings. |
・Magnesium perchlorate ・Rare earth based copper oxide, reduced copper ・Sodium hydroxide (coated on an inert substrate) ・Oxygen water removal reagent (OMI tube) |
Normally 1.0 g, 0.25 g~0.70 g (silicon analysis) |
Width: 71 cm x Depth: 76 cm x Height: 91.5 cm (typical) *Without mounted touch screen (with depth: 80 cm) *Height when lifting the road head cover: 100 cm |
186kg |
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About Company Handling This Product
- Japan