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Inorganic analysis silicon wafer oxygen analyzer O836Si type-O836Si
Inorganic analysis silicon wafer oxygen analyzer O836Si type-LECO Japan LLC

Inorganic analysis silicon wafer oxygen analyzer O836Si type
LECO Japan LLC

LECO Japan LLC's Response Status

Response Rate

100.0%

Response Time

126.8hours


About This Product

■Oxygen analyzer exclusively for silicon wafers developed to meet the demands of the silicon industry

The O836Si is an oxygen analyzer exclusively for silicon wafers, developed to meet the demand for low-concentration, high-precision oxygen analysis in the silicon industry. The combination of a highly accurate non-dispersive infrared detector, the latest sample loading system and a programmable impulse furnace enables accurate and highly accurate oxygen analysis.

■Analysis target

Silicon wafers, metals such as steel, etc. Features and benefits

■Main features

・Highly accurate non-dispersive infrared detector for low concentrations ・Measurement results can also be displayed in ppma

■Functional sample loading area

・Uses a universally designed loading head that is compatible with both silicon wafers and block samples. ・Minimizes atmospheric entrainment when introducing samples ・Simplifies regular maintenance of sample drop mechanism ・OMI tube (reagent for removing oxygen and moisture in carrier gas) is easy to replace and can be bypassed to extend life.

■Highly reliable automation mechanism

・By installing the optional auto cleaner, manual cleaning between samples is minimized. ・Optional batch loader for 20 samples can also be installed.

■Others

・Ergonomic and intuitive operation is possible with the touch panel interface attached to the flexible arm. ・Pressure compensated, temperature controlled gas dosing system ・The latest piping minimizes joints that can cause damage or leaks.

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    Inorganic analysis silicon wafer oxygen analyzer O836Si type

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1 Models of Inorganic analysis silicon wafer oxygen analyzer O836Si type

Image Part Number Price (excluding tax) Power capacity Weight Reagent Sample amount Furnace Detection method Size Operating environment Analytical accuracy (sample weight 0.3 g) Analysis range (sample weight 0.3 g) Analysis time Cooling water Gas used Driving gas Gas used Carrier gas Gas used Gas dose Cycle time Calibration Gas flow rate
Inorganic analysis silicon wafer oxygen analyzer O836Si type-Part Number-O836Si

O836Si

Available upon quote

Single phase 200 V~ (+10/-15%: maximum output, boosted to 230 V), 50/60 Hz, 60 A, 12,500 BTU/hr *Average when operating under normal settings.

186kg

・Magnesium perchlorate
・Rare earth based copper oxide, reduced copper
・Sodium hydroxide (coated on an inert substrate)
・Oxygen water removal reagent (OMI tube)

Normally 1.0 g, 0.25 g~0.70 g (silicon analysis)

Electrode furnace, current/power control, max. 7500 W, water-cooled

Non-dispersive infrared absorption method

Width: 71 cm x Depth: 76 cm x Height: 91.5 cm (typical)
*Without mounted touch screen (with depth: 80 cm)
*Height when lifting the road head cover: 100 cm

Temperature 15℃~35℃
Relative humidity 20%~80% (non-condensing)

Standard deviation (s) 0.05 ppm or RSD 0.3% *Whichever is larger
*Analysis accuracy is the standard deviation (1s) of the instrument blank and varies depending on the sample type and analysis parameters.

0.1 ppm~500 ppm
*Analysis range varies depending on sample type and analysis parameters.

Helium 110 seconds
Argon 120 seconds

3.2L, LECO Coolant

Compressed air or nitrogen (no moisture or oil) 0.28 MPa ±10%

Helium (99.99%), 0.15 MPa ±5%
Argon (99.999%), 0.15 MPa ±5%

Carbon dioxide (99.99%), 0.14 MPa ±10%

Helium 280 seconds
Argon 290 seconds

Standard sample / 1 point or multiple points / manual / gas dose

Carrier: 460 cc/min
Driving gas: 280 cc/analysis

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About Company Handling This Product

Response Rate

100.0%


Response Time

126.8hrs

  • Japan

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