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  4. Achieves smooth surfaces with low damage PlasmaPro 100 ALE Atomic Layer Etching System (Oxford Instruments Ltd.)
Achieves smooth surfaces with low damage PlasmaPro 100 ALE Atomic Layer Etching System-PlasmaPro 100 ALE
Achieves smooth surfaces with low damage PlasmaPro 100 ALE Atomic Layer Etching System-Oxford Instruments Ltd.

Achieves smooth surfaces with low damage PlasmaPro 100 ALE Atomic Layer Etching System
Oxford Instruments Ltd.

About This Product

■Summary

The PlasmaPro 100 ALE atomic layer etch system enables precise control of etching of next generation semiconductor devices. Specifically designed for processes such as recess etching and nanoscale layer etching for GaN HEMT applications, the system's layer-by-layer or cyclic etching process results in smooth surfaces with low damage. Layer-by-layer or cyclic etching process – equivalent to ALD ・Low damage ・Smooth etched surface ・Excellent etching depth control ・Ideal for nanoscale layer etching (2D materials, etc.) ・Suitable for a wide range of processes and applications

■Features

As films become thinner in order to realize next-generation semiconductor devices, there is a need for thin film formation and processing with more precise process control. PlasmaPro 100 ALE is made possible by adding special hardware for atomic layer etching to our Cobra ICP platform. ・Reactive species are supplied to the substrate through a uniform highly conductive path within the chamber: high gas flow can be used while maintaining low pressure ・Height-variable electrode: Utilizes the three-dimensional characteristics of plasma to hold substrates up to 10 mm thick at the optimal height ・Wide temperature range electrode (-150°C to +400°C) can be cooled with liquid nitrogen or a liquid circulation cooler, or heated with a resistance heater: mode switching can be automated with the optional blowout/liquid exchange unit ・Fluid control electrode with recirculating chiller unit: Realizes excellent substrate temperature control ・RF showerhead with optimal gas supply: LF/RF switching achieves uniform plasma treatment and precisely controls film stress ・65mm, 180mm, 300mm ICP plasma sources: Achieves process uniformity up to 200mm wafers ・High pumping capacity: provides a wide process pressure window ・Wafer clamping with He backside cooling: Optimal temperature management of wafers

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    Achieves smooth surfaces with low damage PlasmaPro 100 ALE Atomic Layer Etching System

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1 Models of Achieves smooth surfaces with low damage PlasmaPro 100 ALE Atomic Layer Etching System

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Achieves smooth surfaces with low damage PlasmaPro 100 ALE Atomic Layer Etching System-Part Number-PlasmaPro 100 ALE

PlasmaPro 100 ALE

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Oxford Instruments Ltd.

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