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4 inch GaN substrateProduct
GaN substrateHandling Company
Toyominato Co., Ltd.Categories
Image | Price (excluding tax) | Diameter | Electrical properties (type: resistivity) | Plane direction | Thickness |
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Available upon quote | 100.2mm ± 0.3mm | ・N-type (Silicon): ≤0.02 Ω·cm ・UID: ≤0.2 Ω cm ・Semi-Insulating (Carbon): >1E8 Ω·cm | (0001) Ga-Face c-plane | 540µm ± 30µm |
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