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GaN wafer (φ2 inch) Free-Standing GaN Substrate-Toyominato Co., Ltd.

Price (excluding tax)

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Toyominato Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

17.2hours

Relatively Fast Response


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Azimuth plane

Conductive type

Diameter

Effective area

Electrical resistivity (300K)

Flatness TTV

Packing method

Primary orientation flat orientation. length

Secondary orientation flat direction. length

Surface finish

Transition defect density

Wafer thickness

Warp BOW

See all 2 models in list
  • Part Number

    GaN-FS-C-SI-C50

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GaN wafer (φ2 inch) Free-Standing GaN Substrate GaN-FS-C-SI-C50's performance table

Image Price (excluding tax) Azimuth plane Conductive type Diameter Effective area Electrical resistivity (300K) Flatness TTV Packing method Primary orientation flat orientation. length Secondary orientation flat direction. length Surface finish Transition defect density Wafer thickness Warp BOW
GaN wafer (φ2 inch) Free-Standing GaN Substrate-Part Number-GaN-FS-C-SI-C50 Available upon quote C plane (0001) plane ± 1° Semi-insulating Φ50.8mm ± 0.1mm 90% or more >106Ω・cm 15um or less Filled with nitrogen in a clean room Packed individually or in a cassette of 25 sheets Orientation flat direction (1-100) ±0.5° Orientation flat length 16 ± 1mm Orientation flat direction (11-20) ±3° Orientation flat length 8 ± 1mm Ga side: CMP finish. Ra<0.2nm. Epi-ready finish. N side: Fine ground (non-mirror) 5×105 pieces/cm2 or less 350±25um 20um or less

There are 2 models for this product.

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About Company Handling This Product

Response Rate

100.0%


Response Time

17.2hrs

  • Japan

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