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  4. GaN wafer (Shinyo Co., Ltd.)

GaN wafer
Shinyo Co., Ltd.

About This Product

GaN (gallium nitride, gallium nitride) has a band gap about 3 times wider (3.42eV) and a breakdown voltage about 10 times higher (3.0MV/cm) than silicon. When the on-resistance is lowered to the same 10mΩ/cm2, the withstand voltage reaches 1600V. In addition, it can generate light with relatively short wavelengths such as blue and green, and is used in various optical devices, and is expected to be used as a next-generation power semiconductor device along with SiC. Compared to SiC, SiC has a thermal conductivity that is approximately 3 times higher, and GaN is approximately 10% superior in all other physical property data (band gap, electron mobility, breakdown voltage, and saturation drift velocity). I am. Therefore, SiC has an advantage in high-temperature operating environments, but GaN is more advantageous when used in areas with high power conversion capacity and high operating frequencies.

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    GaN wafer

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1 Models of GaN wafer

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GaN wafer

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Shinyo Co., Ltd.

  • Japan

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Gallium Nitride
Gallium Nitride　Shinyo Co., Ltd.
Shinyo Co., Ltd.

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