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GaN transistor-TSG65N068CE
GaN transistor-Taiwan Semiconductor

About This Product

GaN Power Taiwan Semiconductor has introduced 650V enhancement mode GaN transistors packaged in thermally efficient PDFN packages with small footprints of 5×6 and 8×8 mm. These GaN transistor products meet the requirements of today's high-power systems, delivering higher operating currents, higher efficiency, and smaller, lighter dimensions. Developed specifically for the industrial and renewable energy industries, this transistor has the highest current of any GaN in production. switching device

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    GaN transistor

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1 Models of GaN transistor

Image Part Number Price (excluding tax) Flame retardant evaluation Product weight (g) Terminal finish Package Halogen free standard Solderability standard VGS (th) Standard value (V) VGS (th) Minimum value (V) VGS (th) Maximum value (V) VGS (V) VDS (V) TJ Max. (°C) RoHS compliant RDS (ON) @ 6V Typical (mΩ) RDS (ON) @ 6V max (mΩ) Qrr (nC) Qoss (nC) Qg (nC) @ 6V M.S.L. ID Max. (A) Crss (pF) Coss (pF) Ciss (pF) AEC-Q
GaN transistor-Part Number-TSG65N068CE

TSG65N068CE

Available upon quote

UL94V-0

0.153

Matte tin

PDFN88

IEC 61249-2-21

J-STD-002

1.7

1.1

2.6

-10 to +7

650

150

Compatibility

50

68

0

61

6.7

Not applicable

30

0.6

60

235

Not applicable

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About Company Handling This Product

Company Overview

Taiwan Semiconductor, established in 1979 in Taiwan, is a manufacturer and distributor of integrated circuits ...

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