1 inch/2 inch Ga2O3 wafer
Toyominato Co., Ltd.
About This Product
Gallium oxide is widely used in power electronic devices due to its high breakdown voltage and low on-resistance properties. Electric vehicles, solar power inverters, high-speed rail power transmission, and other areas have potential.
The forbidden band width of gallium oxide reaches 4.85eV, and it has excellent transmittance in the visible light wave region. This makes it applicable to fields such as solar blind ultraviolet exploration and radiation exploration. Taking advantage of the low mismatch characteristics of gallium oxide single crystal and GaN, it is being used to grow GaN to manufacture high-performance, high-frequency devices that are expected to be applied in 5G communications.
■Doping: UID, Sn, Mg/Fe
Nd-Na/Resistivity: 10^16 to 10^17 cm-3, >10^18 cm-3, ≥10^10 Ω cm
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Product
1 inch/2 inch Ga2O3 wafer
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Handling Company
Toyominato Co., Ltd.
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Categories
1 Models of 1 inch/2 inch Ga2O3 wafer
| Product Image | Part Number | Price (excluding tax) | Crystal orientation | Diameter | Dislocation density | Surface | Thickness |
|---|---|---|---|---|---|---|---|
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1 inch/2 inch Ga2O3 wafer |
Available upon quote | -100 | 25.4/50.8 ± 0.5mm | <1×10^5 cm-2 |
Single-sided mirror/double-sided mirror Ra < 0.5nm Crystal plane deviation < ±1° |
0.65 ± 0.02 mm |
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About Company Handling This Product
- Japan