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  4. 1 inch/2 inch Ga2O3 wafer (Toyominato Co., Ltd.)
1 inch/2 inch Ga2O3 wafer-1 inch/2 inch Ga2O3 wafer
1 inch/2 inch Ga2O3 wafer-Toyominato Co., Ltd.

1 inch/2 inch Ga2O3 wafer
Toyominato Co., Ltd.

Toyominato Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

13.2hours

Relatively Fast Response

About This Product

Gallium oxide is widely used in power electronic devices due to its high breakdown voltage and low on-resistance properties. Electric vehicles, solar power inverters, high-speed rail power transmission, and other areas have potential. The forbidden band width of gallium oxide reaches 4.85eV, and it has excellent transmittance in the visible light wave region. This makes it applicable to fields such as solar blind ultraviolet exploration and radiation exploration. Taking advantage of the low mismatch characteristics of gallium oxide single crystal and GaN, it is being used to grow GaN to manufacture high-performance, high-frequency devices that are expected to be applied in 5G communications.

■Doping: UID, Sn, Mg/Fe

Nd-Na/Resistivity: 10^16 to 10^17 cm-3, >10^18 cm-3, ≥10^10 Ω cm

  • Product

    1 inch/2 inch Ga2O3 wafer

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1 Models of 1 inch/2 inch Ga2O3 wafer

Image Part Number Price (excluding tax) Dislocation density Surface Crystal orientation Diameter Thickness
1 inch/2 inch Ga2O3 wafer-Part Number-1 inch/2 inch Ga2O3 wafer

1 inch/2 inch Ga2O3 wafer

Available upon quote

<1×10^5 cm-2

Single-sided mirror/double-sided mirror
Ra < 0.5nm
Crystal plane deviation < ±1°

-100

25.4/50.8 ± 0.5mm

0.65 ± 0.02 mm

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About Company Handling This Product

Toyominato Co., Ltd.

Response Rate

100.0%

Response Time

13.2hrs

  • Japan

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