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  4. Nitride epitaxial substrate AIN template (DOWA Electronics Co., Ltd.)
Nitride epitaxial substrate AIN template-AIN template
Nitride epitaxial substrate AIN template-DOWA Electronics Co., Ltd.

Nitride epitaxial substrate AIN template
DOWA Electronics Co., Ltd.

DOWA Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

101.3hours

Company Review

4.5

About This Product

Gallium nitride (GaN) is a wide bandgap material used in next-generation power semiconductors and high-frequency devices. Our gallium nitride epitaxial substrate uses a unique buffer layer to achieve both high breakdown voltage and good flatness on a Si substrate (GaN on Si HEMT epitaxial substrate). We are also working on the development of p-GaN cap layer and AlGaN DH structure, aiming to realize a normally-off HEMT epitaxial substrate. We also support GaN epitaxial substrates on silicon carbide (SiC) and sapphire, as well as AlN templates for high-quality LEDs (on sapphire substrates).

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    Nitride epitaxial substrate AIN template

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1 Models of Nitride epitaxial substrate AIN template

Image Part Number Price (excluding tax)
Nitride epitaxial substrate AIN template-Part Number-AIN template

AIN template

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About Company Handling This Product

DOWA Electronics Co., Ltd.

Response Rate

100.0%

Response Time

101.3hrs

Company Review

4.5
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