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Nitride epitaxial substrate GaN on Si HEMT-GaN on Si HEMT epi substrate
Nitride epitaxial substrate GaN on Si HEMT-DOWA Electronics Co., Ltd.

Nitride epitaxial substrate GaN on Si HEMT
DOWA Electronics Co., Ltd.

DOWA Electronics Co., Ltd.'s Response Status

Response Rate

100.0%

Response Time

127.2hours


About This Product

Gallium nitride (GaN) is a wide bandgap material used in next-generation power semiconductors and high-frequency devices. Our gallium nitride epitaxial substrate uses a unique buffer layer to achieve both high breakdown voltage and good flatness on a Si substrate (GaN on Si HEMT epitaxial substrate). We are also working on the development of p-GaN cap layer and AlGaN DH structure, aiming to realize a normally-off HEMT epitaxial substrate. We also support GaN epitaxial substrates on silicon carbide (SiC) and sapphire, as well as AlN templates for high-quality LEDs (on sapphire substrates).

■Applications

・Power semiconductor applications: inverters, AC-DC converters ・High frequency device application: For mobile phone base stations

■Product features

・High withstand voltage (1000V) & low leakage current (1E-6A) ・Crack free ・Good bow (Bow<50μm) ・Wafer size (3, 4, 6 inches) ・Thick film compatible (4.8μm) ・p-GaN cap layer, AlGaN DH structure

■Note

・Recommended use: Power switching device ・The listed values ​​and characteristics are typical values. ・We will adjust the structure and characteristics according to your request. ・P-GaN cap layer and AlGaN buffer structure are also available.

  • Product

    Nitride epitaxial substrate GaN on Si HEMT

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1 Models of Nitride epitaxial substrate GaN on Si HEMT

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Nitride epitaxial substrate GaN on Si HEMT-Part Number-GaN on Si HEMT epi substrate

GaN on Si HEMT epi substrate

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About Company Handling This Product

Response Rate

100.0%


Response Time

127.2hrs


Company Review

4.5
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