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Gallium arsenide substrate LEC-semi-insulatingHandling Company
DOWA Electronics Co., Ltd.Categories
Click on the part number for more information about each product
| Image | Part Number | Price (excluding tax) | Plane direction | Surface finish Back side | Surface finish surface | Dislocation density (EPD) (cm^-2) | Surface treatment | Crystal growth method | Diameter (mm) | Packing form | Resistivity (at 25℃) | Periphery processing | Thickness (μm) | Machining accuracy Warp (μm) | Machining accuracy TTV (μm) | Machining accuracy TIR (μm) | Laser mark | Dopant, conductivity type | Size | Orientation flat length OF (mm) IF (mm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
LEC-Semi-insulating 4 inch |
Available upon quote |
1. (100) ±0.1° |
Etch after lapping (mirror processing is also possible) |
Etch after lapping (mirror processing is also possible) |
EPDave |
Epi lady |
LEC (Liquid Encapsulated Czochralski) method |
100.0±0.1 |
Cassette or individual tray |
>/=1×107 Ωcm |
Bevel |
Thickness (μm) |
<10.0 |
<5.0 |
<5.0 |
Option |
Semi-insulating: undoped (C-doped) |
4 inches |
32.0±1.0 |
|
|
LEC-Semi-insulating 3 inch |
Available upon quote |
1. (100) ±0.1° |
Etch after lapping (mirror processing is also possible) |
Etch after lapping (mirror processing is also possible) |
EPDave |
Epi lady |
LEC (Liquid Encapsulated Czochralski) method |
76.0±0.1 |
Cassette or individual tray |
>/=1×107 Ωcm |
Bevel |
Thickness (μm) |
<10.0 |
<5.0 |
<5.0 |
Option |
Semi-insulating: undoped (C-doped) |
3 inches |
22.0±1.0 |
|
|
LEC-Semi-insulating 2 inch |
Available upon quote |
1. (100) ±0.1° |
Etch after lapping (mirror processing is also possible) |
Etch after lapping (mirror processing is also possible) |
EPDave |
Epi lady |
LEC (Liquid Encapsulated Czochralski) method |
50.0±0.1 |
Cassette or individual tray |
>/=1×107 Ωcm |
Bevel |
Thickness (μm) |
<10.0 |
<5.0 |
<5.0 |
Option |
Semi-insulating: undoped (C-doped) |
2 inches |
16.0±1.0 |
Click on the part number for more information about each product
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